參數資料
型號： HY29F002TT-45
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
中文描述： 256K X 8 FLASH 5V PROM, 45 ns, PDSO32
封裝： TSOP-32
文件頁數： 18/38頁
文件大?。?/td> 381K
代理商： HY29F002TT-45
18
Rev. 4.1/May 01
HY29F002T
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = V
IL
, CE# = V
IH
, or
WE# = V
IH
. To initiate a write cycle, CE# and WE#
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on power-
up.
Sector Protection
Additional data protection is provided by the
HY29F002T
’
s sector protect feature, described
previously, which can be used to protect sensitive
areas of the Flash array from accidental or unau-
thorized attempts to alter the data.
相關PDF資料
PDF描述
HY29F002TT-55 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-70 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-90 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F040A 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F080T70 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
相關代理商/技術參數
參數描述
HY29F002TT-45E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TT-45I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TT-55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-55E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TT-55I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
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