參數(shù)資料
型號: HY29F002TT-45
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
中文描述: 256K X 8 FLASH 5V PROM, 45 ns, PDSO32
封裝: TSOP-32
文件頁數(shù): 4/38頁
文件大?。?/td> 381K
代理商: HY29F002TT-45
4
Rev. 4.1/May 01
HY29F002T
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-
-
SIGNAL DESCRIPTIONS
MEMORY ARRAY ORGANIZATION
The 256 Kbyte Flash memory array is organized
into seven blocks called
sectors
(S0, S1, . . . ,
S6). A sector is the smallest unit that can be
erased and which can be protected to prevent
accidental or unauthorized erasure. See the
Bus
Operations
and
Command Definitions
sections
of this document for additional information on these
functions.
Table 1. HY29F002T Memory Array Organization
In the HY29F002T, four of the sectors, which com-
prise the
boot block
, vary in size from 8 to 32
Kbytes, while the remaining three sectors are
uniformly sized at 64 Kbytes. In this device, the
boot block is located at the top of the address
range.
Table 1 defines the sector addresses and corre-
sponding address ranges for the HY29F002T.
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相關PDF資料
PDF描述
HY29F002TT-55 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-70 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-90 2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F040A 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
HY29F080T70 8 Megabit (1M x 8), 5 Volt-only, Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
HY29F002TT-45E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TT-45I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TT-55 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Megabit (256K x 8), 5 Volt-only, Flash Memory
HY29F002TT-55E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM
HY29F002TT-55I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Flash EEPROM