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參數(shù)資料
| 型號： | HY29LV160TF-80 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 |
| 封裝： | 8 X 9 MM, FBGA-48 |
| 文件頁數(shù)： | 11/48頁 |
| 文件大?。?/td> | 517K |
| 代理商： | HY29LV160TF-80 |
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11
Rev. 1.2/May 01
HY29LV160
START
(Note:
All sectors must be
protected prior to
unprotecting any sector)
TRYCNT = 1
SNUM = 0
RESET# = V
ID
Wait 1 us
Write 0x60 to device
Write 0x60 to Address
Set Address:
A[19:12] = Sector SNUM
A[6] = 1, A]1] = 1, A]0] = 0
Write 0x40 to Address
Read from Address
Data = 0x00
SNUM = 34
YES
TRYCNT = 1000
NO
Increment TRYCNT
NO
YES
DEVICE FAILURE
YES
NO
RESET# = V
IH
Write Reset Command
SECTOR UNPROTECT
COMPLETE
SNUM = SNUM + 1
Wait 15 ms
Set Address:
A[6] = 1, A]1] = 1, A]0] = 0
Figure 2. Sector Unprotect Algorithm
START
RESET# = V
(All protected sectors
become unprotected)
Perform Program or Erase
Operations
RESET# = V
(All previously protected
sectors return to protected
state)
TEMPORARY SECTOR
UNPROTECT COMPLETE
Figure 3. Temporary Sector Unprotect
Algorithm
Electronic ID Operation (High Voltage Method)
The Electronic ID mode provides manufacturer and
device identification and sector protection verifi-
cation through codes output on DQ[15:0]. This
mode is intended primarily for programming equip-
ment to automatically match a device to be pro-
grammed with its corresponding programming al-
gorithm.
Two methods are provided for accessing the Elec-
tronic ID data. The first requires V
ID
on address
pin A[9], with additional requirements for obtain-
ing specific data items listed in Table 4.
The Elec-
tronic ID data can also be obtained by the host
through specific commands issued via the com-
mand register, as described in the
‘
Device Com-
mands
’
section of this data sheet.
While in the high-voltage Electronic ID mode, the
system may read at specific addresses to obtain
certain device identification and status informa-
tion:
A read cycle at address 0xXXX00 retrieves the
manufacturer code.
A read cycle at address 0xXXX01 in Word
mode or 0xXXX02 in Byte mode returns the
device code.
A read cycle containing a sector address (SA)
in A[19:12] and the address 0x02 in Word mode
or 0x04 in Byte mode, returns 0x01 if that sec-
tor is protected, or 0x00 if it is unprotected.
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| HY29LV160BF-70I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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| HY29LV160BF-90I | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV160TF-80I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TF-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TF-90I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-12I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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