- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385416 > HY29LV160TT-70I (HYNIX SEMICONDUCTOR INC) 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | HY29LV160TT-70I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| 中文描述： | 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁(yè)數(shù)： | 17/48頁(yè) |
| 文件大小： | 517K |
| 代理商： | HY29LV160TT-70I |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)
17
Rev. 1.2/May 01
HY29LV160
aborted Sector Erase command sequence should
be reissued once the reset operation is complete.
When the Automatic Erase algorithm terminates,
the device returns to the array Read mode. Sev-
eral methods are provided to allow the host to de-
termine the status of the erase operation, as de-
scribed in the Write Operation Status section.
Figure 6 illustrates the Sector Erase procedure.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system
to interrupt a sector erase operation to read data
from, or program data in, any sector not being
erased. The command causes the erase opera-
tion to be suspended in all sectors specified for
erasure. This command is valid only during the
sector erase operation, including during the 50 μs
time-out period at the end of the command se-
quence, and is ignored if it is issued during chip
erase or programming operations.
The HY29LV160 requires a maximum of 20 μs to
suspend the erase operation if the Erase Suspend
command is issued during sector erasure. How-
ever, if the command is written during the time-
out, the time-out is terminated and the erase op-
eration is suspended immediately. Once the erase
operation has been suspended, the system can
read array data from or program data to any sec-
tor not specified for erasure. Normal read and
write timings and command definitions apply.
Reading at any address within erase-suspended
sectors produces status data on DQ[7:0]. The host
can use DQ[7], or DQ[6] and DQ[2] together, to
determine if a sector is actively erasing or is erase-
suspended. See the Write Operation Status sec-
tion for information on these status bits.
After an erase-suspended program operation is
complete, the host can initiate another program-
ming operation (or read operation) within non-sus-
pended sectors. The host can determine the sta-
tus of a program operation during the Erase-Sus-
pended state just as in the standard programming
operation.
The host may also write the Electronic ID or CFI
Query command sequences when the device is
in the Erase Suspend mode. The device allows
reading Electronic ID and CFI codes even at ad-
dresses within erasing sectors, since the codes
are not stored in the memory array. When the
device exits the Electronic ID mode or the CFI
Query mode, the device reverts to the Erase Sus-
pend mode, and is ready for another valid opera-
tion. See Electronic ID and CFI Query Mode sec-
tions for more information.
The system must write the Erase Resume com-
mand to exit the Erase Suspend mode and con-
tinue the sector erase operation. Further writes of
the Resume command are ignored. Another Erase
Suspend command can be written after the de-
vice has resumed erasing.
Electronic ID Command
The Electronic ID mode provides manufacturer and
device identification and sector protection verifi-
cation through identifier codes output on DQ[7:0].
This mode is intended primarily for programming
equipment to automatically match a device to be
programmed with its corresponding programming
algorithm.
Two methods are provided for accessing the Elec-
tronic ID data. The first requires V
ID
on address
pin A[9], as described previously in the Device
Operations section.
The Electronic ID data can also be obtained by
the host by invoking the Electronic ID command,
as shown in Table 6. This method does not re-
quire V
ID
. The Electronic ID command sequence
may be issued while the device is in the Read
mode or in the Erase Suspend Read mode, that
is, except while programming or erasing.
The Electronic ID command sequence is initiated
by writing two unlock cycles, followed by the Elec-
tronic ID command. The device then enters the
Electronic ID mode, and the system may read at
any address any number of times, without initiat-
ing another command sequence.
A read cycle at address 0xXXX00 retrieves the
manufacturer code.
A read cycle at address 0xXXX01 in Word
mode or 0xXXX02 in Byte mode returns the
device code.
A read cycle containing a sector address (SA)
in A[19:12] and the address 0x02 in A[7:0] in
Word mode (or 0x04 in A[6:0, -1] in Byte mode)
returns 0x01 if that sector is protected, or 0x00
if it is unprotected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29LV160TT-80 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-80I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-90I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BF-70 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-12 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV160TT-80 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-80I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160TT-90I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV320 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32 Mbit (2M x 16) Low Voltage Flash Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。