參數資料
型號: HY29LV160TT-80
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
中文描述: 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48
封裝: TSOP-48
文件頁數: 30/48頁
文件大?。?/td> 517K
代理商: HY29LV160TT-80
30
Rev. 1.2/May 01
HY29LV160
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
r
e
t
m
a
r
a
P
C
E
D
E
J
d
t
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t
L
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L
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H
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E
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Q
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F
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B
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V
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H
F
Y
B
n
o
p
c
s
e
D
n
o
p
0
9
O
-
5
5
d
e
0
e
8
p
-
S
t
U
0
7
-
2
1
-
w
h
o
L
g
p
O
p
O
g
g
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n
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o
L
g
c
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S
g
g
#
#
E
E
n
c
w
S
c
w
S
T
T
Y
Y
B
B
o
o
E
E
#
#
T
T
E
E
x
x
x
a
a
a
n
M
M
M
M
s
s
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n
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Z
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-
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v
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h
#
#
5
0
2
7
5
0
2
8
0
0
3
9
0
2
3
1
n
0
Data Output DQ[14:0]
Data Output DQ[7:0]
Data Output DQ[7:0]
Data Output DQ[14:0]
Output DQ[15]
Address Input A-1
Address Input A-1
Data Output DQ[15]
t
ELFL
t
ELFH
t
FHQV
t
FLQZ
CE#
OE#
BYTE#
DQ[14:0]
DQ[15]/A-1
BYTE#
DQ[14:0]
DQ[15]/A-1
BYTE#
switching
from word to
byte mode
BYTE#
switching
from byte to
word mode
Figure 17. BYTE# Timings for Read Operations
Figure 18. BYTE# Timings for Write Operations
t
SET
(t
AS
)
t
HOLD
(t
AH
)
Falling edge of the last WE# signal
CE#
WE#
BYTE#
Note:
Refer to the Program/Erase Operations table for t
AS
and t
AH
specifications.
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