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參數(shù)資料
| 型號(hào)： | HY57V121620 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Banks x 8M x 16Bit Synchronous DRAM |
| 中文描述： | 4銀行× 8米× 16位同步DRAM |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 171K |
| 代理商： | HY57V121620 |
HY57V121620(L)T
Rev.0.3/Dec. 01 6
DC CHARACTERISTICS II
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V121620T-6/K/H/8/P/S
4.HY57V121620LT-6/K/H/8/P/S
Parameter
Symbol
Test Condition
Speed
Unit
Note
-6
-K
-H
-8
-P
-S
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
160
150
150
140
140
140
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= 15ns
2
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
2
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
30ns. All other pins
≥
V
DD
-0.2V or
≤
0.2V
30
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
10
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= 15ns
4
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
4
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
30ns. All other pins
≥
V
DD
-0.2V or
≤
0.2V
50
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
35
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
210
200
200
190
190
190
mA
1
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
310
300
300
290
290
290
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
6
mA
3
3
mA
4
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| HY57V161610D-I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-10I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-55I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V121620LT | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 8M x 16Bit Synchronous DRAM |
| HY57V121620LT-6 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 8M x 16Bit Synchronous DRAM |
| HY57V121620LT-8 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 8M x 16Bit Synchronous DRAM |
| HY57V121620LT-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 8M x 16Bit Synchronous DRAM |
| HY57V121620LT-K | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 8M x 16Bit Synchronous DRAM |
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