參數(shù)資料
型號(hào)： HY5DV651622TC-G6
英文描述： DDR Synchronous DRAM
中文描述： DDR同步DRAM
文件頁數(shù)： 22/27頁
文件大?。?/td> 273K
代理商： HY5DV651622TC-G6
Rev. 0.3/May. 02
22
HY5DV281622AT
DC CHARACTERISTICS I
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note
:
1. V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
= 0V. 2. D
OUT
is disabled, V
OUT
= 0 to 2.7V
DC CHARACTERISTICS II
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. I
DD1, IDD4
and I
DD5
depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of t
RFC
(Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-2
2
uA
1
Output Leakage Current
I
LO
-5
5
uA
2
Output High Voltage
V
OH
V
TT
+ 0.76
-
V
I
OH
= -15.2mA
Output Low Voltage
V
OL
-
V
TT
- 0.76
V
I
OL
= +15.2mA
Parameter
Symbol
Test Condition
Speed
Unit
Note
43
5
Operating Current
I
DD1
Burst length=2, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
160
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= min
20
mA
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), /CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during 2clks
65
mA
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= min
25
mA
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), /CS
≥
V
IH
(min), t
CK
= min
Input signals are changed one time during 2clks
100
mA
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
= 0mA
All banks active
300
mA
1
Auto Refresh Current
I
DD5
t
RC
≥
t
RFC
(min),
All banks active
330
mA
1,2
Self Refresh Current
I
DD6
CKE
≤
0.2V
2
mA
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