- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370744 > HYB 3118165BST-50 (SIEMENS AG) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB 3118165BST-50 |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM) |
| 中文描述： | 100萬× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（超頁模式戶）（1米× 16位動(dòng)態(tài)內(nèi)存） |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 192K |
| 代理商： | HYB 3118165BST-50 |
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
2
1998-10-01
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be
packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 5118165BSJ-50
Q67100-Q1107
P-SOJ-42-1 400 mil
5 V 50 ns EDO-DRAM
HYB 5118165BSJ-60
Q67100-Q1108
P-SOJ-42-1 400 mil
5 V 60 ns EDO-DRAM
HYB 3118165BSJ-50
on request
P-SOJ-42-1 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3118165BSJ-60
on request
P-SOJ-42-1 400 mil
3.3 V 60 ns EDO-DRAM
HYB 5118165BST-50
on request
P-TSOPII-50/44-1 400 mil
5 V 50 ns EDO-DRAM
HYB 5118165BST-60
on request
P-TSOPII-50/44-1 400 mil
5 V 60 ns EDO-DRAM
HYB 3118165BST-50
on request
P-TSOPII-50/44-1 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3118165BST-60
on request
P-TSOPII-50/44-1 400 mil
3.3 V 60 ns EDO-DRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 3118165BST-60 | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM) |
| HYB 5118165BSJ | 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁面模式)) |
| HYB 5118165BST-60 | 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁面模式)) |
| HYB3118165BSJ-50 | 1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB 514100BJ-60 | 4M × 1-Bit Dynamic RAM(4M × 1位動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3118165BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB3118165BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB314100BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。