參數(shù)資料
型號: HYB 5118165BSJ
廠商: SIEMENS AG
英文描述: 1M×16-Bit Dynamic RAM(1M×16位 動態(tài)RAM(快速頁面模式))
中文描述: 100萬× 16位動態(tài)隨機存儲器(100萬× 16位動態(tài)隨機存儲器(快速頁面模式))
文件頁數(shù): 1/24頁
文件大?。?/td> 192K
代理商: HYB 5118165BSJ
Semiconductor Group
1
1998-10-01
1 048 576 words by 16-bit organization
0 to 70
°
C operating temperature
Hyper Page Mode-EDO-operation
Performance:
Power Dissipation, Refresh & Addressing:
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
Plastic Package: P-SOJ-42-1
400 mil
P-TSOPII-50/44-1 400 mil
-50
-60
t
RAC
t
CAC
t
AA
t
RC
t
HPC
RAS access time
50
60
ns
CAS access time
13
15
ns
Access time from address
25
30
ns
Read/Write cycle time
84
104
ns
Hyper page mode (EDO) cycle time
20
25
ns
HYB5118165
HYB3118165
-50
5 V
±
10 %
10/10
-60
-50
3.3 V
±
0.3 V
10/10
-60
Power Supply
Addressing
Refresh
1024 cycles / 16 ms
Active
715
632
468
414
mW
TTL Standby
11
7.2
mW
CMOS Standby
5.5
3.6
mW
1M
×
16-Bit Dynamic RAM
1k Refresh
(Hyper Page Mode-EDO)
Advanced Information
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
相關(guān)PDF資料
PDF描述
HYB 5118165BST-60 1M×16-Bit Dynamic RAM(1M×16位 動態(tài)RAM(快速頁面模式))
HYB3118165BSJ-50 1M x 16-Bit Dynamic RAM 1k Refresh
HYB 514100BJ-60 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM)
HYB514100BJ-50 4M x 1-Bit Dynamic RAM
HYB 514100BJ-50 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5118165BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BSJ-60 制造商:Siemens 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ
HYB5118165BSJBST-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh