參數(shù)資料
型號: HYB 314100BJ-70
廠商: SIEMENS AG
英文描述: 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式))
中文描述: 4米× 1位動態(tài)隨機(jī)存儲器(快速頁面模式)(4米× 1位動態(tài)隨機(jī)存儲器(快速頁面模式))
文件頁數(shù): 22/23頁
文件大?。?/td> 1153K
代理商: HYB 314100BJ-70
Semiconductor Group
22
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Test Mode Entry
Test Mode
The HYB314100BJ/BJL is organized 4 194 304 words by 1- bit but can internally be configured as
524 288 words by 8-bits. A WE, CAS-before-RAS cycle puts the device into Test Mode.
In Test Mode, data is written into 8 sectors in parallel and retrieved the same way. If, upon reading,
all bits are equal, the data output pin indicates a “1”. If any of the bits differ, the data output pin
indicates a “0”. In Test Mode the 4M DRAM can be tested as if it were a 512K DRAM. Test Mode
is exited by any refresh operation which is not a WE, CAS- before-RAS cycle. Addresses A10R,
A10C and A0C do not care during Test Mode.
相關(guān)PDF資料
PDF描述
HYB 314100BJL-50 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式))
HYB 314100BJL-60 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式))
HYB 314100BJL-70 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式))
HYB314100BJL-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314100BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJBJL-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM