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參數(shù)資料
| 型號(hào)： | HYB 314100BJL-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動(dòng)態(tài) RAM(快速頁(yè)面模式)) |
| 中文描述： | 4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁(yè)面模式）（4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（快速頁(yè)面模式）） |
| 文件頁(yè)數(shù)： | 1/23頁(yè) |
| 文件大?。?/td> | 1153K |
| 代理商： | HYB 314100BJL-60 |
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Semiconductor Group 1 4.96
4M x 1-Bit Dynamic RAM
Low Power 4M x 1-Bit Dynamic RAM
Advanced Information
4 194 304 words by 1-bit organization
0 to 70 C operating temperature
Fast Page Mode Operation
Performance:
Single + 3.3 V (
±
0.3 V ) supply with a built-in
V
bb
generator
Low power dissipation
max. 252 mW active (-50 version)
max. 216 mW active (-60 version)
max. 198 mW active (-70 version)
Standby power dissipation:
7.2 mW max. standby (TTL)
3.6 mW max. standby (CMOS)
720
μ
W max. standby (CMOS) for Low Power Version
Output unlatched at cycle end allows two-dimensional chip selection
Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
1024 refresh cycles / 128 ms Low Power Version
Plastic Packages: P-SOJ-26/20-5 with 300 mil width
-50
-60
-70
t
RAC
t
CAC
t
AA
t
RC
t
PC
RAS access time
50
60
70
ns
CAS access time
13
15
20
ns
Access time from address
25
30
35
ns
Read/Write cycle time
95
110
130
ns
Fast page mode cycle time
35
40
45
ns
HYB 314100BJ/BJL -50/-60/-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 314100BJL-70 | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動(dòng)態(tài) RAM(快速頁(yè)面模式)) |
| HYB314100BJL-50 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-60 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB 314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動(dòng)態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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