參數(shù)資料
型號(hào): HYB 5117805BSJ-50
廠商: SIEMENS AG
英文描述: 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
中文描述: 200萬(wàn)× 8 -位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(200萬(wàn)× 8位動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 8/23頁(yè)
文件大?。?/td> 176K
代理商: HYB 5117805BSJ-50
HYB 5(3)117805/BSJ-50/-60
2M
×
8 EDO-DRAM
Semiconductor Group
8
1998-10-01
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode (EDO) read-write cycle
time
t
PRWC
58
68
ns
CAS precharge to WE
t
CPWD
41
49
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
10
ns
CAS hold time
10
10
ns
RAS to CAS precharge time
5
5
ns
Write to RAS precharge time
10
10
ns
Write hold time referenced to RAS
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time (CAS-before-RAS
counter test cycle)
t
CPT
35
40
ns
Test Mode
Write command setup time
t
WTS
t
WTH
t
CHRT
t
RAHT
10
10
ns
Write command hold time
10
10
ns
CAS hold time
30
30
ns
RAS hold time in test mode
30
30
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB 5117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB3117805BSJ-60 2M x 8-Bit Dynamic RAM 2k Refresh
HYB314405BJBJL-50- 1M x 4-Bit Dynamic RAM
HYB314405BJ-60 Transistor Array IC; Number of Transistors:4; Package/Case:16-SOIC; C-E Breakdown Voltage:50V; Mounting Type:Surface Mount
HYB314405BJ-70 1M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5117805BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB5117805BSJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh
HYB5117805BSJ-50-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB5117805BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB5118160BSJ50 制造商:SIEMENS 功能描述:*