參數(shù)資料
型號(hào)： HYB18T1G160AF
廠商： INFINEON TECHNOLOGIES AG
英文描述： 1 Gbit DDR2 SDRAM
中文描述： 1千兆位DDR2內(nèi)存
文件頁(yè)數(shù)： 78/89頁(yè)
文件大?。?/td> 1261K
代理商： HYB18T1G160AF
Page 78 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
tRP
Precharge command period (single bank)
15
-
12
-
ns
tRP(A)
Precharge-All (8 banks) command period
tRP+1tCK
-
tRP+1tCK
-
ns
22
tRRD
Active bank A to Active bank B com-
mand period
x4 & x8
(1k page size)
7.5
-
7.5
-
ns
23
x16 (2k page size)
10
10
ns
tFAW
Four Activate Window period
x4 & x8
(1k page size)
37.5
-
37.5
-
ns
24
x16 (2k page size)
50
-
50
-
ns
tCCD
CAS A to CAS B Command Period
2
2
tCK
tWR
Write recovery time
15
-
15
-
ns
tDAL
Auto-Precharge write recovery + precharge time
WR+tRP
-
WR+tRP
-
tCK
14
tWTR
Internal Write to Read command delay
7.5
-
7.5
-
tCK
15
tRTP
Internal Read to Precharge command delay
7.5
-
7.5
-
ns
tXARD
Exit power down to any valid command
(other than NOP or Deselect)
2
-
2
-
tCK
16
tXARDS
Exit active power-down mode to Read command
(slow exit, lower power)
6 - AL
-
6 - AL
-
tCK
16
tXP
Exit precharge power-down to any valid command
(other than NOP or Deselect)
2
-
2
-
tCK
tXSRD
Exit Self-Refresh to Read command
200
-
200
-
tCK
tXSNR
Exit Self-Refresh to non-Read command
tRFC+10
-
tRFC+10
-
ns
tCKE
CKE minimum high and low pulse width
3
-
3
-
tCK
tREFI
Average periodic refresh Interval
0
o
C - 85
o
C
-
7.8
-
7.8
μs
19
85
o
C - 95
o
C
-
3.9
-
3.9
μs
tOIT
OCD drive mode output delay
0
12
0
12
ns
tDELAY
Minimum time clocks remain ON after CKE asynchro-
nously drops LOW
tIS+tCK+tIH
-
tIS+tCK+tIH
-
ns
17
Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be
powered down and then restarted through the specified initialization sequence before normal operation can continue.
7.2 Timing Parameter by Speed Grade - DDR2-667
(VDDQ = 1.8V
±
0.1V; VDD = 1.8V
±
0.1V) (notes 1-4)
Symbol
Parameter
-3S
DDR2-667-555
-3
DDR2-667-444
Unit
Notes
min.
max
min.
max
相關(guān)PDF資料
PDF描述
HYB18T1G160AF-3 1 Gbit DDR2 SDRAM
HYB18T1G160AF-37 1 Gbit DDR2 SDRAM
HYB18T1G160AF-3S 1 Gbit DDR2 SDRAM
HYB18T1G160AF-5 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-5 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T1G400AF-3.7 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 256M x 4, 68 Pin, Plastic, BGA
HYB18T1G400AF-5 制造商:Infineon Technologies AG 功能描述:256M X 4 DDR DRAM, 0.6 ns, PBGA68
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
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