參數(shù)資料
型號(hào): HYB18T1G400AF-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 34/89頁
文件大?。?/td> 1261K
代理商: HYB18T1G400AF-3
Page 34 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
The minimum time from the burst read command to the burst write command is defined by a read-to-write turn-
around time, which is BL/2 + 2 clocks.
Burst Read Operation: RL = 3 (AL = 0, CL = 3, BL = 8)
Burst Read followed by Burst Write: RL = 5, WL = (RL-1) = 4, BL = 4
CMD
NOP
NOP
NOP
NOP
NOP
NOP
DQ's
NOP
READ A
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 3
CL = 3
NOP
<= tDQSCK
BRead303
DQS,
DQS
Dout A4
Dout A5
Dout A6
Dout A7
CK, CK
NOP
Posted CAS
W RITE A
NOP
NOP
NOP
NOP
NOP
READ A
Posted CAS
T0
T1
Dout A0
Dout A1
Dout A2
Dout A3
RL = 5
NOP
CMD
DQ
BRBW514
T3
T4
T5
T6
T7
T8
T9
Din A0
Din A1
Din A2
Din A3
DQS,
DQS
WL = RL - 1 = 4
BL/2 + 2
CK, CK
相關(guān)PDF資料
PDF描述
HYB18T1G400AF-37 1 Gbit DDR2 SDRAM
HYB18T1G400AF-3S 1 Gbit DDR2 SDRAM
HYB18T1G400AF-5 1 Gbit DDR2 SDRAM
HYB18T1G800AF 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-3 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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