參數(shù)資料
型號: HYB18T1G400AF-3
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 71/89頁
文件大?。?/td> 1261K
代理商: HYB18T1G400AF-3
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
INFINEON Technologies
Page 71 Rev. 1.02 May 2004
5.5 Input / Output Capacitance
5.6 Power & Ground Clamp V-I Characteristics
Power and Ground clamps are provided on address (A0~A13, BA0~BA2), RAS, CAS, CS, WE and ODT pins. The
V-I characteristics for pins with clamps is shown in the following table:
Symbol
Parameter
min.
max.
Units
CCK
Input capacitance, CK and CK
1.0
2.0
pF
CDCK
Input capacitance delta, CK and CK
-
0.25
pF
CI
Input capacitance, all other input-only pins
1.0
2.0
pF
CDI
Input capacitance delta, all other input-only pins
-
0.25
pF
CIO
Input/output capacitance,
DQ, DM, DQS, DQS, RDQS, RDQS
3.0
4.0
pF
CDIO
Input/output capacitance delta,
DQ, DM, DQS, DQS, RDQS, RDQS
-
0.5
pF
Voltage across clamp
(V)
Minimum Power
Clamp Current (mA)
Minimum Ground
Clamp Current (mA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
0.1
1.0
2.5
4.7
6.8
9.1
11.0
13.5
16.0
18.2
21.0
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