參數(shù)資料
型號: HYB18T256400AF-3S
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁數(shù): 13/90頁
文件大?。?/td> 1246K
代理商: HYB18T256400AF-3S
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
INFINEON Technologies
Page 13 Rev. 1.02 May 2004
2. Functional Description
2.1 Simplified State Diagram
Reading_AP
Idle
MRS
tMRD
Reading
R
tRFC
Bank Active
tRP
tRCD
Read
R
Writing
Writing_AP
Wie
W
Selfrefresh
Active PD
CKEH
Precharge PD
PD_entry
CKEH
REFS
REFSX
Ra_P
Write
Read
Autorefreshing
setting MRS
or EMRS
Precharging
Activating
Initialization
Sequence
RL + BL/2 + tRTP
A
P
WL + BL/2 + WR
CKEL
CKEL
CKEL
PD_entry
Automatic Sequence
Command Sequence
P
This Simplified State Diagram is intended to provide a floorplan of the possible state transitions and the
commands to control them. In particular situations involving more than one bank, enabling / disabling on-die
termination, Power-Down entry / exit - among other things - are not captured in full detail.
相關(guān)PDF資料
PDF描述
HYB18T256400AF-5 256 Mbi t DDR2 SDRAM
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HYB18T256800AF-3 256 Mbi t DDR2 SDRAM
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HYB18T256800AF-3S 256 Mbi t DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
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HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述: