- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370782 > HYB18T256400AF-3S (INFINEON TECHNOLOGIES AG) 256 Mbi t DDR2 SDRAM PDF資料下載
參數(shù)資料
| 型號： | HYB18T256400AF-3S |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256 Mbi t DDR2 SDRAM |
| 中文描述： | 256姆噸DDR2內(nèi)存 |
| 文件頁數(shù)： | 52/90頁 |
| 文件大小： | 1246K |
| 代理商： | HYB18T256400AF-3S |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁當(dāng)前第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁
Page 52 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
2.8.4 Concurrent Auto-Precharge
DDR2 devices support the “Concurrent Auto-Precharge” feature. A Read with Auto-Precharge enabled, or a Write
with Auto-Precharge enabled, may be followed by any command to the other bank, as long as that command does
not interrupt the read or write data transfer, and all other related limitations (e.g. contention between Read data
and Write data must be avoided externally and on the internal data bus.
The minimum delay from a Read or Write command with Auto-Precharge enabled, to a command to a different
bank, is summarized in the table below. As defined, the WL = RL - 1 for DDR2 devices which allows the command
gap and corresponding data gaps to be minimized.
From Command
To Command
(different bank,
non-interrupting command)
Minimum Delay with
Concurrent Auto-Pre-
charge Support
Units
Note
WRITE w/AP
Read or Read w/AP
(CL -1) + (BL/2) + tWTR
tCK
Write or Write w/AP
BL/2
tCK
Precharge or Activate
1
tCK
1)
Read w/AP
Read or Read w/AP
BL/2
tCK
Write or Write w/AP
BL/2 + 2
tCK
Precharge or Activate
1
tCK
1)
Note:
1) This rule only applies to a selective Precharge command to another banks, a Precharge-All command is
illegal
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18T256400AF-5 | 256 Mbi t DDR2 SDRAM |
| HYB18T256800AF | 256 Mbi t DDR2 SDRAM |
| HYB18T256800AF-3 | 256 Mbi t DDR2 SDRAM |
| HYB18T256800AF-37 | 256 Mbi t DDR2 SDRAM |
| HYB18T256800AF-3S | 256 Mbi t DDR2 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
| HYB18T256800AF-5 | 制造商:Infineon Technologies AG 功能描述: |
| HYB18T512161BF-25 | 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA |
| HYB18T512400AF-5 | 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA |
| HYB18T512400BF-3S | 制造商:Qimonda 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。