參數(shù)資料
型號： HYB18T512400AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： CAP .0022UF 16V PPS FILM 0603 2%
中文描述： 注冊的DDR2內(nèi)存模塊
文件頁數(shù)： 18/33頁
文件大?。?/td> 936K
代理商： HYB18T512400AC
HYS72T[256/128/64][0/2][0/2]0[G/H]R-[5/3.7]-A
Registered DDR2 SDRAM Modules
Data Sheet
Preliminary
18
Rev. 0.85, 2004-04
5.2 ODT AC Electrical Characteristics and Operating Conditions
(all speed bins)
t
RCD
Active to Read or Write delay (with and without Auto-Pre-
charge) delay
15
-
15
-
ns
t
RP
Precharge command period
15
-
15
-
ns
t
RRD
Active bank A to Active bank
B command
x4 & x8
(1k page size)
7.5
-
7.5
-
ns
t
CCD
t
WR
t
DAL
t
WTR
t
RTP
CAS A to CAS B Command Period
2
-
2
-
t
CK
Write recovery time
15
-
15
-
ns
Auto precharge write recovery + precharge time
WR+tRP
-
WR+tRP
-
t
CK
Internal write to read command delay
10
-
7.5
-
ns
Internal read to precharge command delay
7.5
-
7.5
-
ns
t
XARD
Exit power down to any valid command
(other than NOP or Deselect)
2
-
2
-
t
CK
t
XARDS
Exit active power-down mode to read command
(slew exit, lower power)
6 - AL
-
6 - AL
-
t
CK
t
XP
Exit precharge power-down to any valid command (other
than NOP or Deselect)
2
-
2
-
t
CK
t
XSRD
t
XSNR
t
CKE
t
OIT
Exit Self-Refresh to read command
200
-
200
-
t
CK
Exit Self-Refresh to non-read command
tRFC + 10
-
tRFC + 10
-
ns
CKE minimum high and low pulse width
3
-
3
-
t
CK
OCD drive mode output delay
0
12
0
12
ns
t
DELAY
Minimum time clocks remain ON after CKE asynchro-
nously drops low
tIS+tCK
+tIH
-
tIS+tCK
+tIH
-
ns
t
REFI
Average Periodic Refresh
Interval
0
o
C - 85
o
C
-
7.8
-
7.8
μs
85
o
C - 95
o
C
-
3.9
-
3.9
1. For details and notes see the relevant INFINEON component datasheet
2. Timing definition and values for tis, tih, tds and tdh may change due to actual JEDEC work. This may also effect the SPD code
for these parameters.
Symbol Parameter / Condition
min.
max.
Units
t
AOND
ODT turn-on delay
2
2
t
CK
t
AON
ODT turn-on
DDR2-400/533
tAC(min)
tAC(max) + 1 ns
ns
DDR2-667
tAC(min)
tAC(max) + 0.7 ns
t
AONPD
t
AOFD
t
AOF
t
AOFPD
t
ANPD
t
AXPD
ODT turn-on (Power-Down Modes)
tAC(min) + 2 ns
2 t
CK +
tAC(max) + 1 ns
ns
ODT turn-off delay
2.5
2.5
t
CK
ns
ODT turn-off
tAC(min)
tAC(max) + 0.6 ns
ODT turn-off delay (Power-Down Modes)
tAC(min) + 2 ns
2.5 t
CK +
tAC(max) + 1 ns
ns
ODT to Power Down Mode Entry Latency
3
-
t
CK
t
CK
ODT Power Down Exit Latency
8
-
Symbol
Parameter
-5
DDR2-400
-3.7
DDR2-533
Unit
Min
Max
Min
Max
相關(guān)PDF資料
PDF描述
HYB18T512400AC5 CAP .0022UF 16V PPS FILM 0603 5%
HYB18T512400AF CAP .022UF 16V PPS FILM SMD
HYB18T512400AF-37 CAP .022UF 16V PPS FILM 1206 5%
HYB18T512400AF-5 CAP.00027UF 16V PPS FILM 0603 5%
HYS72T128000GR DDR2 Registered Memory Modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述:
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
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