參數(shù)資料
型號： HYB18T512400AC
廠商： INFINEON TECHNOLOGIES AG
英文描述： CAP .0022UF 16V PPS FILM 0603 2%
中文描述： 注冊的DDR2內(nèi)存模塊
文件頁數(shù)： 2/33頁
文件大小： 936K
代理商： HYB18T512400AC
2
Rev. 0.85, 2004-04
HYS72T[256/128/64][0/2][0/2]0[G/H]R-[5/3.7]-A
Preliminary Data Sheet Rev. 0.85 (Apr. 2004)
Low Profile 240-pin Registered DDR2 SDRAM Modules Datasheet
512 MByte, 1 GByte & 2 GByte Modules
PC2-3200R, PC2-4300R
1.0 Description
The INFINEON HYS72Taaabcd[G/H]R module family are low profile Registered DIMM modules
with 30,00 mm height based on DDR2 technology. DIMMs are available in 64M x 72 (512MByte),
128M x 72 (1GByte) and 256M x 72 (2GByte) organisation and density, intended for mounting into
240 pin connector sockets.
The memory array is designed with 512Mb Double Data Rate (DDR2) Synchronous DRAMs for
ECC applications. All control and address signals are re-driven on the DIMM using register devices
and a PLL for the clock distribution. This reduces capacitive loading to the system bus, but adds one
cycle to the SDRAM timing. Decoupling capacitors are mounted on the PCB board, which provide
a proper voltage supply impedance over the whole frequency range of operations as number and
values are accordant to the JEDEC specification. The DIMMs feature serial presence detect based
on a serial E
2
PROM device using the 2-pin I
2
C protocol. The first 128 bytes are programmed with
configuration data and the second 128 bytes are available to the customer.
240-pin Registered 8-Byte ECC Dual-In-Line
DDR2 SDRAM Module for PC, Workstation
and Server main memory applications
One rank 64Mb x 72, 128Mb x 72 and
two ranks 128Mb
×
72 and 256Mb x 72
organizations
JEDEC standard Double Data Rate 2
Synchronous DRAMs (DDR2 SDRAMs) with
+ 1.8 V (
±
0.1 V) power supply
512MB and 1 GB modulesModules built with
512Mb DDR2 SDRAMs in 60-ball FBGA
chipsize packages
Two versions of 2 GB modules
built with 63-ball FBGA dual die chipsiz
e packages
(
2 x 512Mb components) or 60-ball FBGA packages
Programmable CAS Latencies (3, 4 & 5),
Burst Length (4 & 8) and Burst Type.
Auto Refresh and Self Refresh
All inputs and outputs SSTL_1.8 compatible
Re-drive for all input signals using register
and PLL devices.
OCD (Off-Chip Driver Impedance
Adjustment) and ODT (On-Die Termination)
Serial Presence Detect with E
2
PROM
Low Profile Modules form factor:
133.35 mm x 30,00 mm (MO-237)
Based on JEDEC standard reference card
designs
Performance:
Speed Grade Indicator
Component Speed Grade on Module
Module Speed Grade
Max. Clock Frequency @ CL = 3
Max. Clock Frequency@ CL = 4 & 5
–5
–3.7
Unit
DDR2–400
PC2–3200R
200
200
DDR2–533
PC2–4300R
200
266
MHz
MHz
相關(guān)PDF資料
PDF描述
HYB18T512400AC5 CAP .0022UF 16V PPS FILM 0603 5%
HYB18T512400AF CAP .022UF 16V PPS FILM SMD
HYB18T512400AF-37 CAP .022UF 16V PPS FILM 1206 5%
HYB18T512400AF-5 CAP.00027UF 16V PPS FILM 0603 5%
HYS72T128000GR DDR2 Registered Memory Modules
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述:
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T512800BF-3.7 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
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