參數(shù)資料
型號(hào): HYB25D128800ATL-7
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128 Mbit Double Data Rate SDRAM
中文描述: 128兆雙倍數(shù)據(jù)速率SDRAM
文件頁數(shù): 69/85頁
文件大?。?/td> 3085K
代理商: HYB25D128800ATL-7
Data Sheet
69
Rev. 1.0, 2004-04
HYB25D128[400/800/160]C[C/E/T](L)
128 Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 20
Parameter
Operating Current 0
one bank; active/ precharge;
t
RC
=
t
RC,MIN
;
DQ, DM, and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
Operating Current 1
one bank; active/read/precharge; Burst Length = 4; Refer to
Chapter 4.3.1
for detailed test conditions.
Precharge Power-Down Standby Current
all banks idle; power-down mode; CKE
V
IL,MAX
Precharge Floating Standby Current
CS
V
IH,,MIN
, all banks idle; CKE
V
IH,MIN
;
address and other control inputs changing once per clock cycle;
V
IN
=
V
REF
for DQ, DQS and DM.
Precharge Quiet Standby Current
CS
V
IHMIN
, all banks idle; CKE
V
IH,MIN
;
address and other control inputs stable at
V
IH,MIN
or
V
IL,MAX
;
V
IN
=
V
REF
for DQ, DQS and DM.
Active Power-Down Standby Current
one bank active; power-down mode; CKE
V
ILMAX
;
V
IN
=
V
REF
for DQ, DQS and DM.
Active Standby Current
one bank active; CS
V
IH,MIN
; CKE
V
IH,MIN
;
t
RC
=
t
RAS,MAX
;
DQ, DM and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle.
Operating Current Read
one bank active; Burst Length = 2; reads; continuous burst;
address and control inputs changing once per clock cycle;
50% of data outputs changing on every clock edge;
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B;
I
OUT
= 0 mA
Operating Current Write
one bank active; Burst Length = 2; writes; continuous burst;
address and control inputs changing once per clock cycle;
50% of data outputs changing on every clock edge;
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B
Auto-Refresh Current
t
RC
=
t
RFCMIN
, burst refresh
Self-Refresh Current
CKE
0.2 V; external clock on
Operating Current 7
four bank interleaving with Burst Length = 4; Refer to
Chapter 4.3.1
for detailed test conditions.
I
DD
Conditions
Symbol
I
DD0
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5
I
DD6
I
DD7
相關(guān)PDF資料
PDF描述
HYB25D128160TCL-75 MEMORY SPECTRUM
HYB25D128160TCL-7F MEMORY SPECTRUM
HYB25D128160TE-37 MEMORY SPECTRUM
HYB25D128160TE-5 MEMORY SPECTRUM
HYB25D128160TE-6 MEMORY SPECTRUM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB25D128800ATL-8 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128 Mbit Double Data Rate SDRAM
HYB25D128800C 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM
HYB25D128800CC-5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM
HYB25D128800CC-6 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM
HYB25D128800CE-5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-Mbit Double-Data-Rate SDRAM