參數(shù)資料
型號(hào): HYB3116400BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 60 ns, PDSO40
文件頁數(shù): 3/26頁
文件大?。?/td> 253K
代理商: HYB3116400BTL-60
Semiconductor Group
3
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Pin Configuration
Pin Names
A0 to A10
Row & Column Address Inputs for HYB3117400
A0 to A11
Row Address Inputs for HYB3116400
A0 to A9
Column Address Inputs for HYB3116400
RAS
Row Address Strobe
OE
Output Enable
I/O1 -I/O4
Data Input/Output
CAS
Column Address Strobe
WE
V
CC
V
SS
N.C.
Read/Write Input
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
P-SOJ-26/24-1 (300mil)
P-TSOPII-26/24-1 (300mil)
Vcc
I/O1
I/O2
WE
RAS
N.C.
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
Vss
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
HYB3117400BJ/BT
Vcc
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
16
15
14
Vss
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
Vss
HYB3116400BJ/BT
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