參數(shù)資料
型號: HYB3117805BSJ-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 2M x 8-Bit Dynamic RAM 2k Refresh
中文描述: 2M X 8 EDO DRAM, 50 ns, PDSO28
封裝: 0.400 INCH, PLASTIC, SOJ-28
文件頁數(shù): 1/23頁
文件大?。?/td> 176K
代理商: HYB3117805BSJ-50
Semiconductor Group
1
1998-10-01
2 097 152 words by 8-bit organization
0 to 70
°
C operating temperature
Hyper Page Mode-EDO-operation
Performance:
Power dissipation:
Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and test mode
All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
2048 refresh cycles / 32 ms (2k-refresh)
Plastic Package: P-SOJ-28-3 400 mil
-50
-60
t
RAC
t
CAC
t
AA
t
RC
t
HPC
RAS access time
50
60
ns
CAS access time
13
15
ns
Access time from address
25
30
ns
Read/Write cycle time
84
104
ns
Hyper page mode (EDO) cycle time
20
25
ns
HYB 5117805
HYB 3117805
-50
-60
-50
-60
Power Supply
5
±
10%
440
3.3
±
0.3 V
288
Active
385
252
mW
TTL Standby
11
7.2
mW
CMOS Standby
5.5
3.6
mW
2M
×
8-Bit Dynamic RAM
2k Refresh
(Hyper Page Mode-EDO)
Advanced Information
HYB 5117805/BSJ-50/-60
HYB 3117805/BSJ-50/-60
相關(guān)PDF資料
PDF描述
HYB 3117805BSJ-50 2M*8 Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 3117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 5117805BSJ-50 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB 5117805BSJ-60 2M×8 - Bit Dynamic RAM 2k Refresh(Hyper Page Mode EDO)
HYB3117805BSJ-60 2M x 8-Bit Dynamic RAM 2k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117805BSJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8 - Bit Dynamic RAM 2k Refresh
HYB3117805BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2M x 8-Bit Dynamic RAM 2k Refresh
HYB3117805BSJ-70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EDO Page Mode DRAM
HYB3118160BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh