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參數(shù)資料
| 型號： | HYB314100BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| 中文描述： | 4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-20 |
| 文件頁數(shù)： | 5/23頁 |
| 文件大小： | 1153K |
| 代理商： | HYB314100BJ-70 |
Semiconductor Group
5
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 C
Storage temperature range......................................................................................– 55 to + 150 C
Input/output voltage ........................................................................... – 1 to + min (
V
CC
+ 0.5, 4.6) V
Power Supply voltage..................................................................................................– 1 to + 4.6 V
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V ,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
V
CC
+ 0.5 V
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
2.0
1)
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT =
100
μ
A
)
Input leakage current, any input
(0 V <
V
in
<
V
CC
+ 0.3 V, all other input = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
Average
V
CC
supply current
-50 version
-60 version
-70 version
Standby
V
CC
supply current
(RAS = CAS = WE =
V
IH
)
Average
V
CC
supply current during RAS-only
refresh cycles
-50 version
-60 version
-70 version
Average
V
CC
supply current during fast page
mode operation
-50 version
-60 version
-70 version
Standby
V
CC
supply current
(RAS = CAS = WE =
V
CC
– 0.2 V)
– 1.0
V
1)
2.4
–
V
1)
–
V
CC
– 0.2 –
–
0.4
V
1)
V
0.2
V
μ
A
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
I
CC1
_
–
–
70
60
55
mA
2) 3)4)
I
CC2
–
2
mA
–
I
CC3
_
–
–
70
60
55
mA
2)4)
I
CC4
–
–
50
45
40
mA
2) 3)4)
I
CC5
–
1
200
mA
μ
A
1)
L-version
相關PDF資料 |
PDF描述 |
|---|---|
| HYB314100BJ-60 | IC,A/D CONVERTER,SINGLE,3 1/2-DIGIT,CMOS,DIP,24PIN RoHS Compliant: Yes |
| HYB 314100BJ-60 | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
| HYB 314100BJ-70 | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
| HYB 314100BJL-50 | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
| HYB 314100BJL-60 | 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動態(tài) RAM(快速頁面模式)) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314100BJBJL-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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