參數(shù)資料
型號： HYB314265BJL-45
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 256K x 16-Bit EDO-Dynamic RAM
中文描述： 256K X 16 EDO DRAM, 45 ns, PDSO40
文件頁數(shù)： 1/28頁
文件大?。?/td> 1324K
代理商： HYB314265BJL-45
Semiconductor Group
1
The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by
16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process
as well as advanced circuit techniques to provide wide operation margins, both internally and for the
system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a
standard plastic 400mil wide P-SOJ-40-3 package. This package size provides high system bit
densities and is compatible with commonly used automatic testing and insertion equipment.
The HYB314265BJL parts have a very low power “sleep mode“ supported by Self Refresh.
256K x 16-Bit EDO-Dynamic RAM
Preliminary Information
262 144 words by 16-bit organization
0 to 70
°
C operating temperature
EDO - Hyper Page Mode
Performance:
Low Power dissipation
- Active(max.):
120mA / 120mA / 105mA / 95 mA
- Standby : TTL Inputs (max.) 2.0 mA
- Standby: CMOS Inputs (max.) 1.0 mA
- Standby (L-version) 200
μ
A
-400
-40
-45
-50
t
rc
t
rac
t
cac
t
aa
t
hpc
t
hpc
69
69
79
89
ns
40
40
45
50
ns
10
10
12
13
ns
20
20
22
25
ns
12,5
15
18
20
ns
80
66
55
50
MHz
Power Supply:
Read, write, read-modify-write, CAS -before
RAS refresh, RAS only refresh, hidden refresh
mode
Low Power Version (L) with Self Refresh
and 250
μ
A self refresh current
2 CAS / 1 WE control
All inputs and outputs TTL-compatible
512 refresh cycles / 16 ms
512 refresh cycles / 128 ms (L-version)
Plastic Packages: P-SOJ-40-3 400 mil width
HYB 514265BJ-400
+5 V
±
5%
±
10%
±
10%
±
10%
HYB 514265BJ-40
+5 V
HYB 514265BJ-45
+5 V
HYB 514265BJ-50
HYB 314265BJ(L)-45 +3.3 V
±
0.3 V
HYB 314265BJ(L)-50 +3.3 V
±
0.3 V
+5 V
6.96
HYB 514265BJ-400/40/-45/-50
HYB 314265BJ(L)-45/-50
相關(guān)PDF資料
PDF描述
HYB314265BJL-50 256K x 16-Bit EDO-Dynamic RAM
HYB514405BJ-70 1M x 4-Bit Dynamic RAM
HYB 514405BJ 1M x 4-Bit Dynamic RAM(1M x 4-位動態(tài) RAM (超級頁面EDO模式))
HYB 514405BJL 1M x 4-Bit Dynamic RAM(1M x 4-位動態(tài) RAM (超級頁面EDO模式))
HYB514405BJ 1M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314265BJL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM
HYB314400BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM
HYB314400BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*