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參數(shù)資料
| 型號： | HYB314265BJL-45 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 256K x 16-Bit EDO-Dynamic RAM |
| 中文描述： | 256K X 16 EDO DRAM, 45 ns, PDSO40 |
| 文件頁數(shù)： | 13/28頁 |
| 文件大?。?/td> | 1324K |
| 代理商： | HYB314265BJL-45 |
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HYB 5(3)14265BJ(L)-400/-40/-45/-50
256K x 16 EDO-DRAM
Semiconductor Group
13
Notes:
1) All voltages are referenced to
V
SS
.
2)
I
CC1
,
I
CC3
,
I
CC4
and
I
CC6
depend on cycle rate.
3)
I
CC1
and
I
CC4
depend on output loading. Specified values are obtained with the output open.
4) Address can be changed once or less while RAS =
V
IL
. In case of
I
CC4
it can be changed once or less during
a hyper page mode (EDO) cycle
5) An initial pause of 200
μ
s is required after power-up followed by 8 RAS cycles of which at least one cycle has
to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter,
a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required.
6) AC measurements assume
t
T
= 2 ns.
Hyper Page Mode (EDO) Read-modify-Write Cycle
Hyper page mode (EDO) read-write cycle time
t
PRWC
CAS precharge to WE
51
–
58
–
ns
t
CPWD
41
–
41
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
5
–
10
–
ns
CAS hold time
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
ns
Write hold time referenced to RAS
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
30
–
35
–
ns
Self Refresh Cycle (L-version)
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
–
100k
–
ns
17
RAS precharge
110
–
95
–
ns
17
CAS hold time
– 50
–
– 50
–
ns
17
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 C,
t
T
= 2 ns
Parameter
16E
Symbol
Limit Values
Unit
Note
-45
-50
min.
max.
min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB314265BJL-50 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB514405BJ-70 | 1M x 4-Bit Dynamic RAM |
| HYB 514405BJ | 1M x 4-Bit Dynamic RAM(1M x 4-位動態(tài) RAM (超級頁面EDO模式)) |
| HYB 514405BJL | 1M x 4-Bit Dynamic RAM(1M x 4-位動態(tài) RAM (超級頁面EDO模式)) |
| HYB514405BJ | 1M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314265BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
| HYB314400BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB314400BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB314400BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM |
| HYB314400BJL-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
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