參數(shù)資料
型號: HYB3164160T
廠商: SIEMENS AG
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4米× 16位動態(tài)隨機存儲器
文件頁數(shù): 2/26頁
文件大小: 367K
代理商: HYB3164160T
Semiconductor Group
6
HYB 3164(5)160T-50/-60
4M x 16-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in
SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The
circuit and process design allow this device to achieve high performance and low power dissipation.
This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160T to be packaged in a 500
mil wide TSOP-54 plastic package. These packages provide high system bit densities and are
compatible with commonly used automatic testing and insertion equipment.
Ordering Information
Pin Names
Type
Ordering
Code
Package
Descriptions
HYB 3164160T-50
on request
P-TSOPII-54-1 500 mil DRAM (access time 50 ns)
HYB 3164160T-60
on request
P-TSOPII-54-1 500 mil DRAM (access time 60 ns)
HYB 3165160T-50
on request
P-TSOPII-54-1 500 mil DRAM (access time 50 ns)
HYB 3165160T-60
on request
P-TSOPII-54-1 500 mil DRAM (access time 60 ns)
A0-A12
Address Inputs for HYB 3164160T
A0-A11
Address Inputs for HYB 3165160T
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS,LCAS
Column Address Strobe
WRITE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
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相關代理商/技術參數(shù)
參數(shù)描述
HYB3164160T50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB3164160T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164160T60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB3164160T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164165AT 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM