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    參數資料
    型號: HYB3164165ATL-60
    廠商: SIEMENS A G
    元件分類: DRAM
    英文描述: 4M x 16-Bit Dynamic RAM
    中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
    文件頁數: 4/29頁
    文件大?。?/td> 284K
    代理商: HYB3164165ATL-60
    Semiconductor Group
    4
    HYB3164(5/6)165AT(L)-40/-50/-60
    4M x 16 EDO-DRAM
    TRUTH TABLE
    FUNCTION
    RAS LCAS UCAS
    WE
    OE
    ROW
    ADD
    COL
    ADD
    I/O1-
    I/O16
    Standby
    H
    H - X
    H - X
    X
    X
    X
    X
    High Impedance
    Read:Word
    L
    L
    H
    H
    L
    ROW
    COL
    Data Out
    Read:Lower Byte
    L
    L
    H
    H
    L
    ROW
    COL
    Lower Byte:Data Out
    Upper-Byte:High-Z
    Read:Upper Byte
    L
    H
    L
    H
    L
    ROW
    COL
    Lower Byte:High-Z
    Upper Byte:Data Out
    Write:Word
    (Early-Write)
    L
    L
    L
    L
    X
    ROW
    COL
    Data In
    Write:Lower Byte
    (Early-Write)
    L
    L
    H
    L
    X
    ROW
    COL
    Lower Byte:Data Out
    Upper-Byte:High-Z
    Write:Upper Byte
    (Early Write)
    L
    H
    L
    L
    X
    ROW
    COL
    Lower Byte:High-Z
    Upper Byte:Data Out
    Read-Modify-
    Write
    L
    L
    L
    H - L
    L - H ROW
    COL
    Data Out, Data In
    Hyper Page Mode
    Read (Word)
    1st
    Cycle
    L
    H - L
    H - L
    H
    L
    ROW
    COL
    Data Out
    Hyper Page Mode
    Read (Word)
    2nd
    Cycle
    L
    H - L
    H - L
    H
    L
    n/a
    COL
    Data Out
    Hyper Page Mode
    Early Write(Word)
    1st
    Cycle
    L
    H - L
    H - L
    L
    X
    ROW
    COL
    Data In
    Hyper Page Mode
    Early Write(Word)
    2nd
    Cycle
    L
    H - L
    H - L
    L
    X
    n/a
    COL
    Data In
    Hyper Page Mode
    RMW
    1st
    Cycle
    L
    H - L
    H - L
    H - L
    L - H ROW
    COL
    Data Out, Data In
    Hyper Page Mode
    RMW
    2st
    Cycle
    L
    H - L
    H - L
    H - L
    L - H n/a
    COL
    Data Out, Data In
    RAS only refresh
    L
    H
    H
    X
    X
    ROW
    n/a
    High Impedance
    CAS-before-RAS
    refresh
    H - L L
    L
    H
    X
    X
    n/a
    High Impedance
    Test Mode Entry
    H - L L
    L
    L
    X
    X
    n/a
    High Impedance
    Hidden Refresh
    (Read)
    L-H-
    L
    L
    L
    H
    L
    ROW
    COL
    Data Out
    Hidden Refresh
    (Write)
    L-H-
    L
    L
    L
    L
    X
    ROW
    COL
    Data In
    Self Refresh
    (L-version only)
    H-L
    L
    H
    X
    X
    X
    X
    High Impedance
    相關PDF資料
    PDF描述
    HYB3166165ATL-60 4M x 16-Bit Dynamic RAM
    HYB3164165BT-40 4M x 16-Bit Dynamic RAM
    HYB3165165BT-40 4M x 16-Bit Dynamic RAM
    HYB3166165BT-40 4M x 16-Bit Dynamic RAM
    HYB3165165T-50 4M x 16-Bit Dynamic RAM
    相關代理商/技術參數
    參數描述
    HYB3164165BT 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
    HYB3164165BT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
    HYB3164165BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
    HYB3164165BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
    HYB3164165BTL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM