參數(shù)資料
型號(hào): HYB3164805TL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 8M x 8-Bit Dynamic RAM
中文描述: 8M X 8 EDO DRAM, 60 ns, PDSO34
文件頁數(shù): 14/32頁
文件大?。?/td> 477K
代理商: HYB3164805TL-60
Semiconductor Group
162
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
Read Cycle
Row
Column
Row
Valid Data Out
RAS
CAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
t
RAS
t
RC
t
CSH
t
RAD
t
CAS
t
RP
t
RAH
t
CRP
t
RSH
t
RCD
t
RAL
t
ASR
t
CAH
t
ASC
t
ASR
t
RCH
t
RRH
t
RCS
t
AA
t
OEA
t
CLZ
t
CAC
t
OEZ
t
ODD
t
CDD
t
OFF
t
DZC
t
DZO
t
RAC
Hi Z
Hi Z
“H” or “L”
WL1
相關(guān)PDF資料
PDF描述
HYB3165805TL-60 8M x 8-Bit Dynamic RAM
HYB3164805AJ High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85
HYB3164805AT-50 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85
HYB3164805AT-60 Enhanced Product Wideband Low-Distortion Fully Differential Amplifier 8-MSOP-PowerPAD -55 to 125
HYB3164805BJ 8M x 8-Bit Dynamic RAM
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