參數(shù)資料
型號(hào): HYB3164805TL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 8M x 8-Bit Dynamic RAM
中文描述: 8M X 8 EDO DRAM, 60 ns, PDSO34
文件頁數(shù): 5/32頁
文件大?。?/td> 477K
代理商: HYB3164805TL-60
Semiconductor Group
153
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
Block Diagram for HYB 3165805J/T(L)
相關(guān)PDF資料
PDF描述
HYB3165805TL-60 8M x 8-Bit Dynamic RAM
HYB3164805AJ High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85
HYB3164805AT-50 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85
HYB3164805AT-60 Enhanced Product Wideband Low-Distortion Fully Differential Amplifier 8-MSOP-PowerPAD -55 to 125
HYB3164805BJ 8M x 8-Bit Dynamic RAM
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HYB3165160AT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160AT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160AT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160ATL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160ATL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM