參數(shù)資料
型號: HYB3165160T-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 FAST PAGE DRAM, 50 ns, PDSO54
文件頁數(shù): 2/26頁
文件大?。?/td> 383K
代理商: HYB3165160T-50
Semiconductor Group
6
HYB 3164(5)160T-50/-60
4M x 16-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated in
SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology. The
circuit and process design allow this device to achieve high performance and low power dissipation.
This DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160T to be packaged in a 500
mil wide TSOP-54 plastic package. These packages provide high system bit densities and are
compatible with commonly used automatic testing and insertion equipment.
Ordering Information
Pin Names
Type
Ordering
Code
Package
Descriptions
HYB 3164160T-50
on request
P-TSOPII-54-1 500 mil DRAM (access time 50 ns)
HYB 3164160T-60
on request
P-TSOPII-54-1 500 mil DRAM (access time 60 ns)
HYB 3165160T-50
on request
P-TSOPII-54-1 500 mil DRAM (access time 50 ns)
HYB 3165160T-60
on request
P-TSOPII-54-1 500 mil DRAM (access time 60 ns)
A0-A12
Address Inputs for HYB 3164160T
A0-A11
Address Inputs for HYB 3165160T
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS,LCAS
Column Address Strobe
WRITE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
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