參數(shù)資料
型號(hào): HYB3165805BJ-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 8M x 8-Bit Dynamic RAM
中文描述: 8M X 8 EDO DRAM, 50 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, SO-32
文件頁數(shù): 20/32頁
文件大?。?/td> 477K
代理商: HYB3165805BJ-50
Semiconductor Group
168
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
Hyper Page Mode (EDO) Read Cycle (WE Control)
t
RP
t
RSH
t
CAS
t
CAS
t
CP
t
CRP
t
RAL
t
CAH
t
CAH
t
ASC
t
CSH
t
CAS
t
RCD
t
RAH
t
ASR
Column 2
Row
Data Out
1
RAS
I/O
(Output)
WE
Address
CAS
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
“H” or “L”
VOH
VOL
OE
t
RAS
t
CRP
t
ASC
t
HPC
t
CAH
t
RAD
t
RHCP
t
ASC
t
RCS
t
RRH
t
RCH
t
RAC
t
AA
t
CAC
t
CLZ
t
OEA
t
OES
t
WHZ
t
CAC
t
AA
t
CPA
Data Out
Column N
Column 1
Data Out
N
t
OEZ
t
OFF
t
CAC
t
AA
t
CPA
2
t
RCH
t
RCS
t
WPZ
t
RCH
t
RCS
t
WPZ
t
WHZ
WL7
相關(guān)PDF資料
PDF描述
HYB3164805BTL-50 8M x 8-Bit Dynamic RAM
HYB3165805BTL-50 8M x 8-Bit Dynamic RAM
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