參數(shù)資料
型號(hào): HYB39L128160AC-7.5
廠商: INFINEON TECHNOLOGIES AG
英文描述: HEX DIE SET,.100/.213/.429
中文描述: BJAWBMSpecialty DRAM的移動(dòng)RAM
文件頁數(shù): 14/49頁
文件大?。?/td> 938K
代理商: HYB39L128160AC-7.5
HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
14
2003-02
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$EVROXWH0D[LPXP5DWLQJV
Operating Case Temperature Range (commercial).........................................................0 to + 70
°
C
Storage Temperature Range...................................................................................
55 to + 150
°
C
Input/Output Voltage.........................................................................................
0.3 to
9
DD
+ 0.3 V
Power Supply Voltage
9
DD
......................................................................................
0.3 to + 3.6 V
Power Dissipation.................................................................................................................... 0.7 W
Data out Current (short circuit) ............................................................................................... 50 mA
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1. All voltages are referenced to
9
.
2.
9
may overshoot to
9
+ 0.8V for pulse width of < 4 ns with 2.5V.
9
may undershoot to
0.8 V for pulse width < 4.0 ns with 2.5V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Recommended Operation and DC Characteristics
T
CASE
= 0 to 70
°
C (commercial)
V
SS
V
DD
=
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
DRAM Core Supply Voltage
V
DD
V
DDQ
V
IH
V
IL
V
IH
V
IL
V
OH
3.0
3.6
V
I/O Supply Voltage
3.0
3.6
V
DDQ
+ 0.3
+ 0.3
V
DDQ
+ 0.3
+ 0.3
V
Input High Voltage (CMD, Addr.)
0.8 x V
DDQ
0.3
V
1, 2
Input Low Voltage (CMD, Addr.)
V
1, 2
Data Input High (Logic 1) Voltage
0.8 x V
DDQ
0.3
V
DDQ
- 0.2
V
Data Input Low (Logic 0) Voltage
V
Data Output High (Logic 1) Voltage
(I
OH
=-0.1mA)
Date Output Low (Logic 0) Voltage
(I
OL
=+0.1mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
V
V
OL
0.2
V
I
I(L)
5
5
μ
A
I
O(L)
5
5
μ
A
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