參數(shù)資料
型號: HYB39L128160AT-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: 128-MBIT SYNCHRONOUS LOW-POWER DRAM
中文描述: 128 - Mbit同步低功率DRAM
文件頁數(shù): 8/49頁
文件大?。?/td> 938K
代理商: HYB39L128160AT-75
HYB 39L128160AC/T
128-MBit 3.3V Mobile-RAM
INFINEON Technologies
8
2003-02
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQMx at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Notes:
1. V = Valid, x = Don
t Care, L = Low Level, H = High Level.
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock before the
commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Power Down Mode can not entry in the burst cycle. Address Input for Mode Set (Mode Register Operation
2SHUDWLRQ
Device
State
CKE
n-1
CKE
n
DQM
BA0
BA1
AP=
A10
Addr
CS
RAS
CAS
WE
Bank Active
Idle
3
H
X
X
V
V
V
L
L
H
H
Bank Precharge
Any
H
X
X
V
L
X
L
L
H
L
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
Write
Active
3
H
X
X
V
L
V
L
H
L
L
Write with Autoprecharge
Active
3
H
X
X
V
H
V
L
H
L
L
Read
Active
3
H
X
X
V
L
V
L
H
L
H
Read with Autoprecharge
Active
3
H
X
X
V
H
V
L
H
L
H
Mode Register Set
Idle
H
X
X
V
V
V
L
L
L
L
No Operation
Any
H
X
X
X
X
X
L
H
H
H
Burst Stop
Active
H
X
X
X
X
X
L
H
H
L
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
Auto Refresh
Idle
H
H
X
X
X
X
L
L
L
H
Self Refresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
Self Refresh Exit
Idle
(Self
Refr.)
L
H
X
X
X
X
H
X
X
X
L
H
H
X
Power Down Entry
(Precharge or active
standby)
Idle
H
L
X
X
X
X
H
X
X
X
Active
4
L
H
H
H
Power Down Exit
Any
(Power
Down)
L
H
X
X
X
X
H
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
L
X
X
X
X
X
X
X
Data Write/Output Disable
Active
H
X
H
X
X
X
X
X
X
X
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