參數(shù)資料
型號(hào): HYB39L256160AT-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 MBit Synchronous Low-Power DRAM
中文描述: 256兆比特同步低功率DRAM
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 569K
代理商: HYB39L256160AT-8
Mobile-RAM – Extended Battery
Lifetime for Handhelds
A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of
leading-edge Mobile-RAM devices (low-power SDRAMs) targeted specifically at:
PDAs
Cellphones (smart and feature phones)
Digital cameras
MP3 players
I N F I N E O N ’ S M O B I L E - R A M product line combines
Ultra low-power consumption for battery-powered systems with
Extra compact chip-scale packages for space-constrained applications
I N F I N E O N ’ S M O B I L E - R A M cuts power consumption by up to 80 % (depending on operating conditions
and system design) – thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated
power management features.
M O B I L E - R A M D E V I C E S come in a Fine-pitch Ball Grid Array (FBGA) package. These packages leverage
Infineon’s proprietary wire bonding Board-On-Chip (BOC) technology for smallest form factors. The latest product
generation further improves form factor by reducing package heights from 1.2 to 1 mm.
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