參數(shù)資料
型號: HYB39L256160AT-8
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 MBit Synchronous Low-Power DRAM
中文描述: 256兆比特同步低功率DRAM
文件頁數(shù): 3/6頁
文件大小: 569K
代理商: HYB39L256160AT-8
Impressive Power Consumption Savings
I N F I N E O N ’ S M O B I L E - R A M devices achieve these dramatic power consumption savings by measuring
the temperature with an integrated sensor and automatically adjusting the refresh interval accordingly.
F O R U S E R S , this means that their devices can either run twice as long on a single battery charge or can
offer completely new features that would have been previously unthinkable. The fact that nearly half of all PDAs produced
today contain Mobile-RAMs from Infineon confirms the company’s pioneering role in this segment.
Mobile-RAM for Lowest Power Consumption also in Operating Mode
Mobile-RAM for Unlimited Memory Supply in Standby Mode
3.3 V - 256 M
85 mA*
3.3 V - 256 M
65 mA*
2.5 V - 256 M
65 mA*
1.8 V - 256 M
60 mA*
281 mW
100 %
215 mW
77 %
100 %
163 mW
58 %
76 %
100 %
108 mW
38 %
50 %
66 %
P
Standard SDRAM
“l(fā)ow power sort”
* operating current (lcc1)
3.3 V - 256 M
850 μA (70°C)*
3.3 V - 256 M
475 μA (70°C)*
2.5 V - 256 M
475 μA (70°C)*
1.8 V - 256 M
375 μA (70°C)*
2.8 mW
100 %
1.6 mW
57 %
100 %
1.19 mW
43 %
74 %
100 %
0.68 mW
24 %
43 %
57 %
P
* standby current (lcc6)
Standard
SDRAM
“l(fā)ow power sort”
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