參數(shù)資料
型號(hào): HYB39S16160CT-7
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications
中文描述: 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 16/22頁
文件大?。?/td> 147K
代理商: HYB39S16160CT-7
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
16
1998-10-01
AC Characteristics
8, 9
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symbol
Limit Values
Unit
Note
-8
-10
min.
max.
min.
max.
Clock and Clock Enable
Clock Cycle time
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
t
CK
8
12
24
10
15
30
ns
ns
ns
System frequency
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
t
CK
125
83
41
100
66
33
MHz
MHz
MHz
Clock Access time
CAS Latency = 3
CAS Latency = 2
CAS Latency = 1
t
AC
7
8
21
8
9
27
ns
ns
ns
10
Clock High Pulse width
t
CH
t
CL
t
T
3
3.5
ns
Clock Low Pulse width
3
3.5
ns
Transition time (rise and fall)
1
30
1
30
ns
Setup and Hold Times
Command Setup time
t
CS
t
AS
t
DS
t
CKS
t
CKSP
t
CKSR
t
CH
t
AH
t
DH
t
CKH
2.5
3
ns
11
Address Setup time
2.5
3
ns
11
Data In Setup time
2.5
3
ns
11
CKE Setup time
2.5
3
ns
11
CKE Set-up time (Power down mode)
2.5
3
ns
11
CKE Set-up time (Self Refresh Exit)
8
8
ns
Command Hold time
1
1
ns
11
Address Hold time
1
1
ns
11
Data In Hold time
1
1
ns
11
CKE Hold time
1
1
ns
11
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