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參數(shù)資料
| 型號： | HYB39S16320TQ-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 128 x 64 pixel format, LED Backlight available |
| 中文描述： | 512K X 32 SYNCHRONOUS GRAPHICS RAM, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 19/70頁 |
| 文件大?。?/td> | 563K |
| 代理商： | HYB39S16320TQ-10 |
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HYB 39S16320TQ-6/-7/-8
Semiconductor Group
19
1998-10-01
A fixed-length Write burst may be followed by, or truncated with a Precharge command to the same
bank (provided that Auto Precharge was not activated) and a full-page Write burst may be truncated
with a Precharge command to the same bank. The Precharge command should be issued x cycles
(x =
t
WR
/
t
CK
rounded up to the next whole number) after the clock edge at which the last desired
input data element is registered. In addition, the DQM signals must be used to mask input data,
starting with the clock edge following the last desired data element and ending with the clock edge
on which the Precharge command is entered. A Precharge command issued at the optimum time
provides the same operation that would result from the same fixed-length Burst with Auto
Precharge.
Disadvantages of Write Command with Auto Precharge
1. Back to back Read/Write bursts can not be initiated. The Read/Write command with Auto
Precharge will automatically initiate a precharge of the row in the selected bank. Most of the
applications require subsequent Read/Write bursts in the same page.
2. The Auto Precharge command does not allow truncation of fixed-length bursts. It also does not
apply to Full Page bursts.
Terminating a Write Burst
The fixed-length or Full-Page Write bursts can be truncated with the Burst Terminate command.
When truncating a Write burst, the input data applied one clock edge prior to the Burst Terminate
command will be the last data written.
Masked Writes
Any Write performed to a row that was activated via an Active with WPB command is a Write-per-
Bit-Mask (WPBM). Data is written to the 32 cells at the selected column location subject to the mask
stored in the WPB mask register. The data to be written in the DRAM cell will be according to the
following mask:
Write Masking Function Representation
DQM
MR
DRAM Cell
0
0
Mask
1
0
Mask
1
1
Mask
0
1
Write
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39S16400-1 | 16 MBit Synchronous DRAM |
| HYB39S16400CT-8 | 16 MBit Synchronous DRAM |
| HYB39S16800CT-8 | 16 MBit Synchronous DRAM |
| HYB39S16400BT-10 | JOYSTICK, POTENTIOMETER, 3 AXIS; Angle:20(degree); Centres, fixing:32.2mm; Depth, external:41.5mm; Diameter, panel cut-out:39mm; Length / Height, external:73mm; Material:ABS; Operations, mechanical No. of:1000000; Power, DC:0.125W; RoHS Compliant: Yes |
| HYB39S16400CT-10 | 16 MBit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16320TQ-5.5 | 制造商:Siemens 功能描述:Electronic Component |
| HYB39S16320TQ-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Special Mode Registers Two color registers Burst Read with Single Write Operation |
| HYB39S16320TQ-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Special Mode Registers Two color registers Burst Read with Single Write Operation |
| HYB39S16320TQ-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Special Mode Registers Two color registers Burst Read with Single Write Operation |
| HYB39S1632TQ55 | 制造商:N/A 功能描述:NEW |
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