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參數(shù)資料
| 型號： | HYB39S16400CT-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 16 MBit Synchronous DRAM |
| 中文描述： | 4M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO50 |
| 封裝： | 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50 |
| 文件頁數(shù)： | 1/19頁 |
| 文件大小： | 101K |
| 代理商： | HYB39S16400CT-10 |
Semiconductor Group
1
1998-10-01
16 MBit Synchronous DRAM
The HYB39S16400/800/160CT are dual bank Synchronous DRAM’s based on SIEMENS 0.25
μ
m
process and organized as 2 banks
×
2 MBit
×
4, 2 banks
×
1 MBit
×
8 and 2 banks
×
512 kbit
×
16 respectively. These synchronous devices achieve high speed data transfer rates up to 125
MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output
data to a system clock. The chip is fabricated with SIEMENS’ advanced 16 MBit DRAM process
technology.
The device is designed to comply with all JEDEC standards set for synchronous DRAM products,
both electrically and mechanically. All of the control, address, data input and output circuits are
synchronized with the positive edge of an externally supplied clock.
Operating the two memory banks in an interleaved fashion allows random access operation to
occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up
to 125 MHz is possible depending on burst length, CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operate with a single
3.3V
±
0.3V power supply and are available in TSOPII packages.
These Synchronous DRAM devices are available with LV-TTL interfaces.
High Performance:
Fully Synchronous to Positive Clock Edge
0 to 70
°
C operating temperature
Dual Banks controlled by A11 ( Bank Select)
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence:
Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8
Full page (optional) for sequencial wrap
around
-8
-10
Units
f
CK(MAX.)
t
CK3
t
AC3
t
CK2
t
AC2
125
100
MHz
8
10
ns
6
7
ns
10
12
ns
6
8
ns
Multiple Burst Read with Single Write
Operation
Automatic and Controlled Precharge
Command
Data Mask for Read/Write control
Dual Data Mask for byte control (
×
16)
Auto Refresh (CBR) and Self Refresh
Suspend Mode and Power Down Mode
4096 refresh cycles/64 ms
Random Column Address every CLK
(1-N Rule)
Single 3.3 V
±
0.3 V Power Supply
LVTTL Interface
Plastic Packages:
P-TSOPI-44 400mil width (
×
4,
×
8)
P-TSOPII-50 400mil width (
×
16 )
-8 version for PC100 applications
HYB 39S16400/800/160CT-8/-10
相關PDF資料 |
PDF描述 |
|---|---|
| HYB39S16800CT-10 | 16 MBit Synchronous DRAM |
| HYB39S256160T | 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM) |
| HYB39S256800 | 256 MBit Synchronous DRAM(256M位同步動態(tài)RAM) |
| HYB39S256400DC-6 | 256 MBit Synchronous DRAM |
| HYB39S256400DC-7 | 256 MBit Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16400CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400T-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HYB39S16400T-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM |
| HYB39S164400 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16800AT-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
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