參數(shù)資料
型號: HYB39S16320TQ-6
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 128 x 64 pixel format, LED Backlight available
中文描述: 512K X 32 SYNCHRONOUS GRAPHICS RAM, 5.5 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 68/70頁
文件大?。?/td> 563K
代理商: HYB39S16320TQ-6
HYB 39S16320TQ-6/-7/-8
Semiconductor Group
68
1998-10-01
21. Full Page Write Cycle
21.1. CAS Latency = 2
T14
DBx
~
Command
Bank B
Activate
Addr.
A8/AP
DQMx
DQ
Command
Bank A
Activate
Write
Command
Bank A
Hi-Z
RAx
RAx
DAx
DAx 1
CAx
page address back to zero
during this time interval.
the burst counter increments and continues
bursting beginning with the starting address.
CBx
DBx
Write
Command
Bank B
terminate when the burst length is satisfied;
from the highest order
The burst counter wraps
1
DAx
+
DAx 2
~
+3
~
DAx-
~
RBx
RBx
~
~
~
DAx
DAx+1
Full Page burst operation does not
Data is
ignored.
DBx
DBx+1
+
DBx 2
4
3
DBx+
DBx 5
T3
CLK
CKE
CS
CAS
RAS
BA
WE
T0
High
CK2
t
T1
T2
~
~
~
~
~
~
~
~
~
~
~
~
~
T4
~
T5
~
T7
T6
T8
T10
T9
T11
T13
T12
SPT03735
Precharge
Command
Bank B
Burst Stop
Command
Command
Bank B
Activate
+6
RBy
RBy
T20
T17
T15
T16
T18
T19
T21 T22
Burst Length = Full Page, CAS Latency = 2
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