參數(shù)資料
型號： HYB514171BJ-50-
廠商： SIEMENS AG
英文描述： 256k x 16-Bit Dynamic RAM
中文描述： 256k x 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù)： 5/23頁
文件大小： 181K
代理商： HYB514171BJ-50-
HYB 514171BJ-50/-60
256k
×
16 DRAM
Semiconductor Group
5
1998-10-01
Absolute Maximum Ratings
Operating temperature range ....................................................................................... 0 to + 70
°
C
Storage temperature range.................................................................................... – 55 to + 150
°
C
Input/output voltage ......................................................................................................... – 1 to 6 V
Power supply voltage........................................................................................................ – 1 to 6 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
V
CC
+ 0.5 V
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
1
Input low voltage
TTL Output high voltage (
I
OUT
= – 5.0 mA)
TTL Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
IN
<
V
CC
+ 0.3 V, all other inputs = 0 V)
Output leakage current
(DO is disabled, 0 V <
V
OUT
<
V
CC
)
Average
V
CC
supply current
– 1.0
V
1
2.4
–
V
1
–
0.4
V
μ
A
1
– 10
10
1
I
O(L)
– 10
10
μ
A
1
-50 version
-60 version
I
CC1
–
190
170
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
IH
)
Average
V
CC
supply current during
RAS-only refresh cycles
I
CC2
–
2
mA
-50 version
-60 version
I
CC3
–
190
170
mA
2, 4
Average
V
CC
supply current during
fast page mode operation
-50 version
-60 version
I
CC4
–
160
150
mA
2, 3, 4
Standby
V
CC
supply current
(RAS = LCAS = UCAS = WE =
V
CC
– 0.2 V)
Average
V
CC
supply current during
CAS-before-RAS refresh mode
I
CC5
–
1
mA
1
-50 version
-60 version
I
CC6
–
190
170
mA
2, 4
相關(guān)PDF資料
PDF描述
HYB 514171BJ-60 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM)
HYB514171BJ-60 256k x 16-Bit Dynamic RAM
HYB 514175BJ-50 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM)
HYB 514175BJ-55 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM)
HYB 514175BJ-60 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB514171BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit Dynamic RAM
HYB514171BJ-80 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB514171BJ-85 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB514171BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB514171BJL-60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
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