參數(shù)資料
型號: HYB 514175BJ-50
廠商: SIEMENS AG
英文描述: 256k × 16-Bit Dynamic RAM(256k × 16位 動態(tài) RAM)
中文描述: 256k × 16位動態(tài)隨機存儲器(256k × 16位動態(tài)內存)
文件頁數(shù): 1/22頁
文件大?。?/td> 177K
代理商: HYB 514175BJ-50
Semiconductor Group
1
1998-10-01
256k
×
16-Bit EDO-DRAM
Advanced Information
262 144 words by 16-bit organization
0 to 70
°
C operating temperature
Fast access and cycle time
RAS access time:
50 ns (-50 version)
55 ns (-55 version)
60 ns (-60 version)
CAS access time:
13 ns (-50 & -55 version)
15 ns (-60 version)
Cycle time:
89 ns (-50 version)
94 ns (-55 version)
104 ns (-60 version)
Hyper page mode (EDO) cycle time
20 ns (-50 & -55 version)
25 ns (-60 version)
High data rate
50 MHz (-50 & -55 version)
40 MHz (-60 version)
Single + 5 V (
±
10 %) supply with a built-in
V
BB
generator
Low Power dissipation
max. 1100 mW active (-50 version)
max. 1045 mW active (-55 version)
max. 935 mW active (-60 version)
Standby power dissipation
11 mW standby (TTL)
5.5 mW max. standby (CMOS)
Output unlatched at cycle end allows
two-dimensional chip selection
Read, write, read-modify write,
CAS-before-RAS refresh, RAS-only
refresh, hidden-refresh and hyper page
(EDO) mode capability
2 CAS/1 WE control
All inputs and outputs TTL-compatible
512 refresh cycles/16 ms
Plastic Packages:
P-SOJ-40-1 400 mil width
HYB 514175BJ-50/-55/-60
相關PDF資料
PDF描述
HYB 514175BJ-55 256k × 16-Bit Dynamic RAM(256k × 16位 動態(tài) RAM)
HYB 514175BJ-60 256k × 16-Bit Dynamic RAM(256k × 16位 動態(tài) RAM)
HYB514175BJ-50- 256k x 16-Bit EDO-DRAM
HYB514175BJ-55 256k x 16-Bit EDO-DRAM
HYB514175BJ-60 256k x 16-Bit EDO-DRAM
相關代理商/技術參數(shù)
參數(shù)描述
HYB514175BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJ-55 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256k x 16-Bit EDO-DRAM
HYB514175BJL-50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM