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參數(shù)資料
| 型號(hào)： | HYB514256B |
| 廠商： | SIEMENS AG |
| 英文描述： | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| 中文描述： | 256畝× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器的低功耗256畝× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 215K |
| 代理商： | HYB514256B |
Semiconductor Group
55
01.95
262 144 words by 4-bit organization
Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
Low power dissipation
max. 495 mW active (-50 version)
max. 440 mW active (-60 version)
max. 385 mW active (-70 version)
max. 5.5 mW standby
max. 1.1 mW standby for L-version
Ordering Information
Type
HYB 514256B-50
Ordering Code
Q67100-Q1044
Package
P-DIP-20-2
Description
DRAM (access time 50ns)
HYB 514256B-60
Q67100-Q530
P-DIP-20-2
DRAM (access time 60 ns)
HYB 514256B-70
Q67100-Q433
P-DIP-20-2
DRAM (access time 70 ns)
HYB 514256BJ-50
Q67100-Q1054
P-SOJ-26/20-1
DRAM (access time 50 ns)
HYB 514256BJ-60
Q67100-Q536
P-SOJ-26/20-1
DRAM (access time 60 ns)
HYB 514256BJ-70
Q67100-Q537
P-SOJ-26/20-1
DRAM (access time 70 ns)
HYB 514256BL-50
on request
P-DIP-20-2
DRAM (access time 50 ns)
HYB 514256BL-60
Q67100-Q542
P-DIP-20-2
DRAM (access time 60 ns)
HYB 514256BL-70
Q67100-Q543
P-DIP-20-2
DRAM (access time 70 ns)
HYB 514256BJL-50
on request
P-SOJ-26/20-1
DRAM (access time 50 ns)
HYB 514256BJL-60
Q67100-Q608
P-SOJ-26/20-1
DRAM (access time 60 ns)
HYB 514256BJL-70
Q67100-Q607
P-SOJ-26/20-1
DRAM (access time 70 ns)
256 K
×
4-Bit Dynamic RAM
Low Power 256 K
×
4-Bit Dynamic RAM
Advanced Information
Single + 5 V (
±
10 %) supply with a built-in
V
BB
generator
Output unlatched at cycle end allows two-
dimensional chip selection
Read-modify-write, CAS-before-RAS
refresh, RAS-only refresh, hidden-refresh
and fast page mode capability
All inputs, outputs and clocks
TTL-compatible
512 refresh cycles/8 ms
512 refresh cycles/64 ms
for L-version only
Plastic Packages:
P-DIP-20-2,
P-SOJ-26/20-1
HYB 514256B/BJ-50/-60/-70
HYB 514256BL/BJL-50/-60/-70
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB514256B-50 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514265BJ-40 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB514265BJ-400 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB514265BJ-45 | 256K x 16-Bit EDO-Dynamic RAM |
| HYB314265BJ-45 | 256K x 16-Bit EDO-Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514256B-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-60 | 制造商:Siemens 功能描述: |
| HYB514256B-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HYB514256BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
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