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參數(shù)資料
| 型號： | HYB514256BL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| 中文描述： | 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大小： | 215K |
| 代理商： | HYB514256BL-60 |
Semiconductor Group
61
HYB 514256B/BL/BJ/BJL-50/-60/-70
256 K
×
4-DRAM
AC Characteristics
4) 13)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
-50
-60
-70
min.
max.
min.
max.
min.
max.
Random read or write cycle
time
t
RC
95
–
110
–
130
–
ns
Read-modify-write cycle time
t
RWC
t
PC
t
PRWC
140
–
160
–
185
–
ns
Fast page mode cycle time
35
–
40
–
45
–
ns
Fast page mode read-modify-
write cycle time
80
–
90
–
100
–
ns
Access time from RAS
6) 11)
t
RAC
–
50
–
60
–
70
ns
Access time from CAS
6) 11)
t
CAC
–
15
–
15
–
20
ns
Access time from column
address
6) 12)
t
AA
–
25
–
30
–
35
ns
Access time from CAS
precharge
6) 12)
t
CPA
–
30
–
35
–
40
ns
CAS to output in low-Z
4)
t
CLZ
t
OFF
0
–
0
–
0
–
ns
Output buffer
turn-off delay
7)
0
15
0
20
0
20
ns
Transition time
(rise and fall)
5)
t
T
3
50
3
50
3
50
ns
RAS precharge time
t
RP
t
RAS
t
RASP
35
–
40
–
50
–
ns
RAS pulse width
50
10.000
60
10.000
70
10.000
ns
RAS pulse width
(fast page mode)
50
100.000 60
100.000 70
100.000 ns
RAS hold time
t
RSH
t
CSH
t
CAS
t
RHCP
15
–
15
–
20
–
ns
CAS hold time
50
–
60
–
70
–
ns
CAS pulse width
15
10.000
15
10.000
20
10.000
ns
RAS hold time from CAS
precharge (Fast Page Mode)
30
–
35
–
45
–
ns
CAS precharge to WE delay
time (FPM RMW)
t
CPWD
55
–
60
–
65
–
ns
RAS to CAS delay time
11)
t
RCD
20
35
20
45
20
50
RAS to column address delay
time
12)
t
RAD
15
25
15
30
15
35
ns
CAS to RAS precharge time
t
CRP
t
CP
5
–
5
–
5
–
ns
CAS precharge time
10
–
10
–
10
–
ns
相關PDF資料 |
PDF描述 |
|---|---|
| HYB514256BL-70 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-60 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-70 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256B-50 | 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514256BL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
| HYB514256BZ-60 | 制造商:Siemens 功能描述:256K X 4 FAST PAGE DRAM, 60 ns, PZIP20 |
| HYB514256BZ-70 | 制造商:Siemens 功能描述:Dynamic RAM, Fast Page, 256K x 4, 20 Pin, Plastic, ZIP |
| HYB514256BZ-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HYB514256BZL-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
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