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參數(shù)資料
| 型號： | HYB514800BJ-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 512kx8-Bit Dynamic RAM |
| 中文描述： | 512K X 8 FAST PAGE DRAM, 70 ns, PDSO28 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 211K |
| 代理商： | HYB514800BJ-70 |
Semiconductor Group
128
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 C
Storage temperature range......................................................................................– 55 to + 150 C
Soldering temperature ............................................................................................................260 C
Soldering time.............................................................................................................................10 s
Input/output voltage ........................................................................................................– 1 to + 7 V
Power Supply voltage.....................................................................................................– 1 to + 7 V
Data out current (short circuit) ................................................................................................50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
ih
V
il
V
oh
V
ol
I
I
(L)
2.4
6.5
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
in
< 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 <
V
OUT
<
V
CC
)
Average
V
CC
supply current
– 1.0
0.8
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 10
10
1)
I
o(L)
– 10
10
μ
A
1)
-60 version
-70 version
-80 version
I
CC1
–
–
–
110
100
90
mA
2) 3)
Standby
V
CC
supply current
(RAS = CAS =
V
ih
)
Average
V
CC
supply current during RAS-only
refresh cycles
I
CC2
–
2
mA
–
-60 version
-70 version
-80 version
I
CC3
–
–
–
110
100
90
mA
2)
Average
V
CC
supply current during fast page
mode operation
-60 version
-70 version
-80 version
I
CC4
–
–
–
70
60
50
mA
2) 3)
HYB 514800BJ -60/-70/-80
512k x 8 DRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB514800BJ | 512kx8-Bit Dynamic RAM |
| HYB514800BJ-60 | 512kx8-Bit Dynamic RAM |
| HYBRID-1998 | |
| HYBRID-CAPABILITIES | Optoelectronic |
| HYBRID-CUSTOM | ASIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514800BJ-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
| HYB514800BJL-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB514800BJL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB514800BJL-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB55A05 | 制造商:SEPA 功能描述:FAN 55MM 5VDC |
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