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參數(shù)資料
| 型號(hào)： | HYB514800BJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 512kx8-Bit Dynamic RAM |
| 中文描述： | 512K X 8 FAST PAGE DRAM, 60 ns, PDSO28 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大小： | 211K |
| 代理商： | HYB514800BJ-60 |
Semiconductor Group
125
01.95
512kx8-Bit Dynamic RAM
Advanced Information
512 288 words by 8-bit organization
0 to 70 C operating temperature
Fast access and cycle time
RAS access time:
60 ns (-60 version)
70 ns (-70 version)
80 ns (-80 version)
CAS access time:
20 ns
Cycle time:
110 ns (-60 version)
130 ns (-70 version)
150 ns (-80 version)
Fast page mode cycle time
45 ns (-60 version)
45 ns (-70 version)
50 ns (-80 version)
Single + 5 V (
±
10 %) supply with a
built-in
V
bb
generator
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 514800BJ-60
Q67100-Q849
P-SOJ-28-2
DRAM
(access time 60 ns)
HYB 514800BJ-70
Q67100-Q850
P-SOJ-28-2
DRAM
(access time 70 ns)
HYB 514800BJ-80
Q67100-Q851
P-SOJ-28-2
DRAM
(access time 80 ns)
HYB 514800BJ -60/-70/-80
Low power dissipation
max. 605 mW active (-60 version)
max. 550 mW active (-70 version)
max. 468 mW active (-80 version)
Standby power dissipation:
11 mW standby standby (TTL)
5.5 mW max.standby (CMOS)
Output unlatched at cycle end allows two-
dimensional chip selection
Read, write, read-modify write, CAS-before-
RAS refresh, RAS-only refresh, hidden
refresh, fast page mode capability
All inputs and outputs TTL-compatible
1024 refresh cycles / 16 ms
Plastic Packages: P-SOJ-28-2 400 mil width
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| HYBRID-1998 | |
| HYBRID-CAPABILITIES | Optoelectronic |
| HYBRID-CUSTOM | ASIC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB514800BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
| HYB514800BJ-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512kx8-Bit Dynamic RAM |
| HYB514800BJL-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB514800BJL-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB514800BJL-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
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