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參數(shù)資料
| 型號： | HYE18P16161AC-85 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 16M Asynchronous/Page CellularRAM |
| 中文描述： | 1,600異步/頁的CellularRAM |
| 文件頁數(shù)： | 27/33頁 |
| 文件大?。?/td> | 641K |
| 代理商： | HYE18P16161AC-85 |
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Data Sheet
27
V2.0, 2003-12-16
HYE18P16161AC(-/L)70/85
16M Asynch/Page CellularRAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Absolute Maximum Ratings
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
3.2
Recommended Power & DC Operation Ratings
All values are recommended operating conditions unless otherwise noted.
Table 9
Parameter
Absolute Maximum Ratings
Symbol
Limit Values
Min.
-25
-55
–
-0.3
-0.3
-0.3
–
-50
Unit
Notes
Max.
+85
+150
260
+2.45
+3.6
+3.6
180
+50
Operating temperature range
Storage temperature range
Soldering peak temperature (10 s)
Voltage of
V
DD
supply relative to
V
SS
Voltage of
V
DDQ
supply relative to
V
SS
Voltage of any input relative to
V
SS
Power dissipation
Short circuit output current
T
C
T
STG
T
Sold
V
DD
V
DDQ
V
IN
P
D
I
OUT
°C
°C
°C
V
V
V
mW
mA
–
–
–
–
–
–
–
–
Table 10
Parameter
Recommended DC Operating Conditions
Symbol
Limit Values
Typ.
1.8
1.8
2.5
3.0
–
–
Unit
Notes
Min.
1.7
1.7
2.3
2.7
Max.
1.95
2.25
2.7
3.3
Power supply voltage, core
Power supply voltage, 1.8 V I/Os
Power supply voltage, 2.5 V I/Os
Power supply voltage, 3.0 V I/Os
Input high voltage
Input low voltage
V
DD
V
DDQ
V
DDQ
V
DDQ
V
IH
V
IL
V
V
V
V
V
V
–
–
–
–
–
–
V
DDQ
– 0.4
-0.2
V
DDQ
+ 0.2
0.4
Table 11
Parameter
DC Characteristics
Symbol
Limit Values
Typ.
–
–
–
–
Unit
Notes
Min.
Max.
–
Output high voltage (
I
OH
= -0.2 mA)
Output low voltage (
I
OL
= 0.2 mA)
Input leakage current
Output leakage current
V
OH
V
OL
I
LI
I
LO
V
DDQ
×
0.8
–
–
–
V
V
μ
A
μ
A
–
–
–
–
V
DDQ
×
0.2
1
1
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相關代理商/技術參數(shù) |
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