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參數(shù)資料
| 型號： | HYE18P16161AC-85 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 16M Asynchronous/Page CellularRAM |
| 中文描述： | 1,600異步/頁的CellularRAM |
| 文件頁數(shù)： | 9/33頁 |
| 文件大?。?/td> | 641K |
| 代理商： | HYE18P16161AC-85 |
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Data Sheet
9
V2.0, 2003-12-16
HYE18P16161AC(-/L)70/85
16M Asynch/Page CellularRAM
Overview
1.2
General Description
The 16M Asynchronous/Page CellularRAM (CellularRAM) is is the competitive alternative to today’s SRAM based
solutions in wireless applications, such as cellular phones. With its high density 1T1C-cell concept and highly
optimized low power design, the CellularRAM is the advanced economic solution for the growing memory demand
in baseband IC designs. SRAM-pin compatibility, refresh-free operation and extreme low power design makes a
drop-in replacement in legacy systems an easy procedure.
Low power feature of Partial Array Self Refresh (PASR) allows the user to dynamically scale the active
(=refreshed) memory to his needs and to adapt the refresh rate to the actual system environment. That is no power
penalty is paid in case only portions of the total available memory capacity is used (e.g. 8Mb out of 16Mb).
The CellularRAM is available in two package options, in the SRAM compatible FBGA 48-ball package and with an
enhanced feature set in a FBGA 54-ball package. For the advanced 54-ball device please refer to the
corresponding data sheet (
HYE18P16160AC)
.
The CelllularRAM can be powered from a single 1.8V power supply feeding the core and the output drivers.
Feeding the I/Os with a separate voltage supply the CelllularRAM can be easily adapted to systems operating in
an I/O voltage range from 1.8V to 3.0V. The chip is fabricated in Infineon Technologies advanced 0.14μm low
power process technology.
The configuration of interfacing CellularRAM is illustrated in
Figure 1
. Data byte control (UB, LB) is featured in all
modes and provides dedicated lower and upper byte access.
Figure 1
CellularRAM - Interface Configuration Options
The CellularRAM comes in a P-VFBGA-48 package.
FBGA-48
CS1
WE
OE
UB
LB
ZZ
A20-A0
DQ15-DQ0
FBGA-48
A20-A0
DQ15-DQ0
1.8V VDD & VDDQ
1.8V VDD
2.5V/ 3.0V VDDQ
CS1
WE
OE
UB
LB
ZZ
(note) A20 is “don’t care” in 16M CellularRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE18P16161AC-60 | MEMORY SPECTRUM |
| HYE18P16161AC-70 | 16M Asynchronous/Page CellularRAM |
| HYE18P32160AC | 32M Synchronous Burst CellularRAM |
| HYE18P32160AC-96 | 32M Synchronous Burst CellularRAM |
| HYE18P32160ACL125 | JT 8C 8#16 SKT WALL RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE18P16161ACL70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P16161ACL85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M Asynchronous/Page CellularRAM |
| HYE18P32160AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
| HYE18P32160AC-125 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
| HYE18P32160AC-15 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
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