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參數(shù)資料
| 型號： | HYE18P32160ACL15 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | JT 23C 21#20 2#16 SKT PLUG |
| 中文描述： | 32M的同步突發(fā)的CellularRAM |
| 文件頁數(shù)： | 13/53頁 |
| 文件大?。?/td> | 1426K |
| 代理商： | HYE18P32160ACL15 |
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Data Sheet
13
V2.0, 2003-12-16
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Overview
1.6
Commands
The supported command set depends on the selected operation mode. By default the CellularRAM device is reset
to the asynchronous SRAM-type mode after power-up. To put the device in a different operation mode the Bus
Configuration Register must be programmed first accordingly. The valid control input states and sequences are
listed below for the different operation modes. Other control signal combinations are not supported.
1.6.1
In the SRAM-type operation mode all commands are of asynchronous nature.
Table 3
lists the asynchronous
commands supported in SRAM-type mode. CLK has to be held low for entire asynchronous mode operation.
Commands Supported in SRAM-Type Mode
Note:‘L’ represents a low voltage level, ‘H’ a high voltage level, ‘X’ represents “Don’t Care”, ‘V’ represents “Valid”.
Table 3
Asynchronous Command Table (SRAM-Type Mode)
Operation Mode
Power Mode
CS
ADV WE
OE
UB/
LB
L
1)
L
1)
X
CRE A19
A20 - A0
DQ15:0
READ
WRITE
SET CONTROL
REGISTER
NO OPERATION
DESELECT
DPD
4)
Active
Active
Active
L
L
L
L
L
L
H
L
L
L
X
2)
X
2)
1)
Table 3
reflects the behaviour if UB and LB are asserted to low. If only either of the signals, UB or LB, is asserted to low
only the corresponding data byte will be output or written (UB enables DQ15 - DQ8, LB enables DQ7 - DQ0).
2) During a write access invoked by WE set to low the OE signal is ignored.
3) Stand-by power mode applies only to the case when CS goes low from DESELECT while no address change occurs.
Toggling address results in active power mode. Also, NO OPERATION from any active power mode by keeping CS low
consumes the power higher than stand-by mode.
4) Deep power down is maintained until control register is re-programmed to disable DPD control bit (RCR Bit 4).
L
L
H
V
V
L
H
X
X
X
ADR
ADR
RCR DIN
BCR DIN
X
X
X
DOUT
DIN
X
Standby~Active
3)
Standby
Deep Power Down
L
H
H
X
X
X
H
X
X
H
X
X
X
X
X
L
X
X
High-Z
High-Z
High-Z
Table 4
Mode
READ
Description of Commands (SRAM-Type Mode)
Description
The READ command is used to perform an asynchronous read cycle. The
signals, UB and LB, define whether only the lower, the upper or the whole 16-bit
word is output.
The WRITE command is used to perform an asynchronous write cycle. The data
is latched on the rising edge of either CS, WE, UB, LB, whichever comes first.
The signals, UB and LB, define whether only the lower, the upper or the whole
16-bit word is latched into the CellularRAM.
SET CONTROL REGISTER
The control registers are loaded via the address inputs A19, A15 - A0 performing
an asynchronous write access. Please refer to the control register description for
details. The SCR command can only be issued when the CellularRAM is in idle
state.
NO OPERATION
The NOP command is used to perform a no operation to the CellularRAM, which
is selected (CS = 0). Operations already in progress are not affected. Power
consumption of this command mode varies by address change and initiating
condition.
WRITE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE18P32160ACL96 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:11; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight RoHS Compliant: No |
| HYE18P32160AC-125 | M39012 MIL RF CONNECTOR |
| HYE18P32160AC-15 | M39012 MIL RF CONNECTOR |
| HYE18P32161AC-85 | 32M Asynchronous/Page CellularRAM |
| HYE18P32161AC | 32M Asynchronous/Page CellularRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE18P32160ACL96 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Synchronous Burst CellularRAM |
| HYE18P32161AC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE18P32161AC-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE18P32161AC-85 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
| HYE18P32161ACL70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:32M Asynchronous/Page CellularRAM |
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