參數(shù)資料
型號(hào): HYM64V1645GU-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
中文描述: 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
封裝: DIMM-168
文件頁(yè)數(shù): 9/17頁(yè)
文件大?。?/td> 95K
代理商: HYM64V1645GU-60
HYM 64(72)V1605/45GU-50/-60
16M x 64/72 DRAM Module
Semiconductor Group
9
DC Characteristics for HYM64/72V1605 (4k-refresh)
T
A
= 0 to 70 °C;
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
x 64
x 72
Unit Note
s
min.
max.
min.
max.
Average
V
CC
supply current:
-50 version
-60 version
(RAS,CAS,address cycling,
t
RC
=
t
RC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
IH,
one address change)
Average
V
CC
supply current during RAS
only refresh cycles:
I
CC1
2240
1840
2520
2070
mA
mA
2) 3)
4)
I
CC2
32
36
mA
-50 version
-60 version
(RAS cycling, CAS =
V
IH
, t
RC
=
t
RC
min.)
Average
V
CC
supply current during
hyper page mode (EDO):
I
CC3
2240
1840
2520
2070
mA
mA
2) 4)
-50 version
-60 version
(RAS =
V
IL,
CAS, address cycling
t
PC
=
t
PC
min.)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V, one address
change)
Average
V
CC
supply current during
CAS-before-RAS refresh mode:
I
CC4
1680
1360
1890
1530
mA
mA
2) 3)
4)
I
CC5
16
18
mA
-50 version
-60 version
(RAS, CAS cycling
, t
RC
=
t
RC
min.)
I
CC6
2240
1840
2520
2070
mA
mA
2) 4)
相關(guān)PDF資料
PDF描述
HYM72V1605GU-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM72V1645GU-50 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM72V1645GU-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module
HYM72V1620GS-50 16M x 72-Bit Dynamic RAM Module
HYM72V1630GS-50 16M x 72-Bit Dynamic RAM Module
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