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參數(shù)資料
| 型號： | HYM75V32M636T6-H |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | SODIMM-144 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 179K |
| 代理商： | HYM75V32M636T6-H |
PC133 SDRAM SO DIMM
Rev. 0.1/Apr. 02
7
HYM75V32M636(L)T6 Series
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION (TA=0 to 70°C)
Note :
1.All voltages are referenced to VSS = 0V
2.VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1W
Soldering Temperature
Time
TSOLDER
260
10
°C Sec
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.3
3.6
V
1
Input High voltage
VIH
2.0
3.0
VDDQ + 0.3
V
1,2
Input Low voltage
VIL
-0.3
0
0.8
V
1,3
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
VIH / VIL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level Voltage
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
50
pF
1
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